NP100P06PDG-E1-AY

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Mfr.:	Renesas(瑞萨)
Mfr. Part #:	NP100P06PDG-E1-AY
YJC. No:	C004554149
Package:	TO-263
ECCN:	-
Description:	1个P沟道 耐压:60V 电流:100A
Datasheet:	Datasheet

SPECIFICATION

Category

MOSFET

类型

1个P沟道

漏源电压(Vdss)

60V

连续漏极电流(Id)

100A

功率(Pd)

200W；1.8W

导通电阻(RDS(on)@Vgs,Id)

6mΩ@50A,10V

阈值电压(Vgs(th)@Id)

2.5V@1mA

栅极电荷(Qg@Vgs)

300nC@10V

输入电容(Ciss@Vds)

15nF@10V

Shop:

1001

Settle

Cooperation

QTY[pcs]

Price[CNY/pcs]

1+

24.55

10+

23.97

30+

23.59

100+

23.2

QTY(Multiplicity:1):

Stock:

800

+-

Add To Cart

Quota

Mpq:

800 (圆盘)

Delivery:

2-5 Business Day

Total:

￥24.55

C004554149 NP100P06PDG-E1-AY is designed and produced by Renesas(瑞萨), and is available for sale in the Discrete Semiconductor-Transistor-MOSFET of Yuanjingcheng Supply Chain Co., Ltd. https://www.szyjc.com, and can be purchased and ordered through the original manufacturer/agent and other formal channels. C004554149 NP100P06PDG-E1-AY reference price ￥24.55，real-time inventory 800. TO-263 类型: 1个P沟道, 漏源电压(Vdss): 60V, 连续漏极电流(Id): 100A, 功率(Pd): 200W；1.8W, 导通电阻(RDS(on)@Vgs,Id): 6mΩ@50A,10V, 阈值电压(Vgs(th)@Id): 2.5V@1mA, 栅极电荷(Qg@Vgs): 300nC@10V, 输入电容(Ciss@Vds): 15nF@10V. You can download the Chinese information, pin diagram, datasheet data manual function manual of NP100P06PDG-E1-AY, and check the real-time inventory, price, and delivery date. In special cases, you can make inquiries for quotations, one-click purchases of bom, and selection substitutions. The platform provides data API docking, real-time inventory VMI services, and online EDI transactions.