SIA517DJ-T1-GE3

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Mfr.:	Vishay(威世)
Mfr. Part #:	SIA517DJ-T1-GE3
YJC. No:	C004557337
Package:	PowerPAK-SC-70-6-Dual
ECCN:	-
Description:	1个N沟道+1个P沟道 耐压:12V 电流:4.5A
Datasheet:	Datasheet Datasheet

SPECIFICATION

Category

MOSFET

类型

1个N沟道+1个P沟道

漏源电压(Vdss)

12V

连续漏极电流(Id)

4.5A

导通电阻(RDS(on)@Vgs,Id)

29mΩ@4.5V,5A

功率(Pd)

6.5W

阈值电压(Vgs(th)@Id)

1V@250uA

栅极电荷(Qg@Vgs)

15nC@8V

输入电容(Ciss@Vds)

500pF@6V

工作温度

-55℃~+150℃@(Tj)

Shop:

1001

Settle

Cooperation

QTY[pcs]

Price[CNY/pcs]

1+

7.63

10+

6.47

30+

5.83

100+

5.11

500+

4.79

1000+

4.65

QTY(Multiplicity:1):

Stock:

50

+-

Add To Cart

Quota

Mpq:

1 (圆盘)

Delivery:

2-5 Business Day

Total:

￥7.63

C004557337 SIA517DJ-T1-GE3 is designed and produced by Vishay(威世), and is available for sale in the Discrete Semiconductor-Transistor-MOSFET of Yuanjingcheng Supply Chain Co., Ltd. https://www.szyjc.com, and can be purchased and ordered through the original manufacturer/agent and other formal channels. C004557337 SIA517DJ-T1-GE3 reference price ￥7.63，real-time inventory 50. PowerPAK-SC-70-6-Dual 类型: 1个N沟道+1个P沟道, 漏源电压(Vdss): 12V, 连续漏极电流(Id): 4.5A, 导通电阻(RDS(on)@Vgs,Id): 29mΩ@4.5V,5A, 功率(Pd): 6.5W, 阈值电压(Vgs(th)@Id): 1V@250uA, 栅极电荷(Qg@Vgs): 15nC@8V, 输入电容(Ciss@Vds): 500pF@6V, 工作温度: -55℃~+150℃@(Tj). You can download the Chinese information, pin diagram, datasheet data manual function manual of SIA517DJ-T1-GE3, and check the real-time inventory, price, and delivery date. In special cases, you can make inquiries for quotations, one-click purchases of bom, and selection substitutions. The platform provides data API docking, real-time inventory VMI services, and online EDI transactions.