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CZT5551 TR

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Mfr.:Central(中央半导体)
Mfr. Part #:
YJC. No:
Package:SOT-223-3
ECCN:-
Description:耐压:160V 电流:600mA NPN
Datasheet:
Datasheet
SPECIFICATION
Category
Bipolar Transistor (triode)
晶体管类型
NPN
集电极电流(Ic)
600mA
集射极击穿电压(Vceo)
160V
功率(Pd)
2W
直流电流增益(hFE@Ic,Vce)
80@10mA,5V
特征频率(fT)
100MHz
集电极截止电流(Icbo)
50nA
集电极-发射极饱和电压(VCE(sat)@Ic,Ib)
200mV@50mA,5mA
工作温度
-65℃~+150℃@(Tj)
Shop:
1001
Settle
Cooperation
QTY[pcs]
Price[CNY/pcs]
1+
2.75
10+
2.24
30+
2.02
100+
1.74
500+
1.62
1000+
1.55
QTY(Multiplicity:1):
Stock:
1,000
Mpq:
1000 (圆盘)
Delivery:
2-5 Business Day
Total:
2.75
C004568310 CZT5551 TR is designed and produced by Central(中央半导体), and is available for sale in the Discrete Semiconductor-Transistor-Bipolar Transistor (triode) of Yuanjingcheng Supply Chain Co., Ltd. https://www.szyjc.com, and can be purchased and ordered through the original manufacturer/agent and other formal channels. C004568310 CZT5551 TR reference price ¥2.75,real-time inventory 1000. SOT-223-3 晶体管类型: NPN, 集电极电流(Ic): 600mA, 集射极击穿电压(Vceo): 160V, 功率(Pd): 2W, 直流电流增益(hFE@Ic,Vce): 80@10mA,5V, 特征频率(fT): 100MHz, 集电极截止电流(Icbo): 50nA, 集电极-发射极饱和电压(VCE(sat)@Ic,Ib): 200mV@50mA,5mA, 工作温度: -65℃~+150℃@(Tj). You can download the Chinese information, pin diagram, datasheet data manual function manual of CZT5551 TR, and check the real-time inventory, price, and delivery date. In special cases, you can make inquiries for quotations, one-click purchases of bom, and selection substitutions. The platform provides data API docking, real-time inventory VMI services, and online EDI transactions.
Datasheet
RFQ
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