C004584066 LNE06R062 is designed and produced by Lonten(龙腾), and is available for sale in the Discrete Semiconductor Transistor MOSFET of Yuanjingcheng Supply Chain Co., Ltd. https://www.szyjc.com. The package is TO-263-2, and can be purchased and ordered through the original manufacturer/agent and other formal channels. SZYJC can view real-time inventory, tiered prices, and delivery delivery dates.

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LNE06R062

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Mfr.:	Lonten(龙腾)
Mfr. Part #:
YJC. No:
Package:	TO-263-2
ECCN:	-
Description:	1个N沟道耐压:60V 电流:120A
Datasheet:

SPECIFICATION

Category

MOSFET

类型

1个N沟道

漏源电压(Vdss)

60V

连续漏极电流(Id)

120A

功率(Pd)

120W

导通电阻(RDS(on)@Vgs,Id)

10mΩ@4.5V,10A

阈值电压(Vgs(th)@Id)

3V@250uA

Shop:

1001

Settle

Cooperation

QTY[pcs]

Price[CNY/pcs]

3.66

10+

2.89

30+

2.51

100+

2.13

QTY(Multiplicity:1):

Stock:

800

Mpq:

800 (圆盘)

Delivery:

2-5 Business Day

Total:

￥3.66

C004584066 LNE06R062 is designed and produced by Lonten(龙腾), and is available for sale in the Discrete Semiconductor-Transistor-MOSFET of Yuanjingcheng Supply Chain Co., Ltd. https://www.szyjc.com, and can be purchased and ordered through the original manufacturer/agent and other formal channels. C004584066 LNE06R062 reference price ￥3.66，real-time inventory 800. TO-263-2 类型: 1个N沟道, 漏源电压(Vdss): 60V, 连续漏极电流(Id): 120A, 功率(Pd): 120W, 导通电阻(RDS(on)@Vgs,Id): 10mΩ@4.5V,10A, 阈值电压(Vgs(th)@Id): 3V@250uA. You can download the Chinese information, pin diagram, datasheet data manual function manual of LNE06R062, and check the real-time inventory, price, and delivery date. In special cases, you can make inquiries for quotations, one-click purchases of bom, and selection substitutions. The platform provides data API docking, real-time inventory VMI services, and online EDI transactions.

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