MMFTN3019E

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Mfr.:	ST(先科)
Mfr. Part #:	MMFTN3019E
YJC. No:	C004615095
Package:	SOT-523-3
ECCN:	-
Description:	1个N沟道 耐压:30V 电流:100mA
Datasheet:	Datasheet

SPECIFICATION

Category

MOSFET

类型

1个N沟道

漏源电压(Vdss)

30V

连续漏极电流(Id)

100mA

功率(Pd)

150mW

导通电阻(RDS(on)@Vgs,Id)

8Ω@4V,10mA

阈值电压(Vgs(th)@Id)

1.5V@100uA

Shop:

1001

Settle

Cooperation

QTY[pcs]

Price[CNY/pcs]

20+

0.147884

200+

0.118617

600+

0.102358

4000+

0.090554

8000+

0.0821

20000+

0.077547

QTY(Multiplicity:20):

Stock:

4,000

+-

Add To Cart

Quota

Mpq:

4000 (圆盘)

Delivery:

2-5 Business Day

Total:

￥2.96

C004615095 MMFTN3019E is designed and produced by ST(先科), and is available for sale in the Discrete Semiconductor-Transistor-MOSFET of Yuanjingcheng Supply Chain Co., Ltd. https://www.szyjc.com, and can be purchased and ordered through the original manufacturer/agent and other formal channels. C004615095 MMFTN3019E reference price ￥0.147884，real-time inventory 4000. SOT-523-3 类型: 1个N沟道, 漏源电压(Vdss): 30V, 连续漏极电流(Id): 100mA, 功率(Pd): 150mW, 导通电阻(RDS(on)@Vgs,Id): 8Ω@4V,10mA, 阈值电压(Vgs(th)@Id): 1.5V@100uA. You can download the Chinese information, pin diagram, datasheet data manual function manual of MMFTN3019E, and check the real-time inventory, price, and delivery date. In special cases, you can make inquiries for quotations, one-click purchases of bom, and selection substitutions. The platform provides data API docking, real-time inventory VMI services, and online EDI transactions.