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2N7002T

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Mfr.:Tak Cheong(德昌)
Mfr. Part #:
YJC. No:
Package:SOT-523-3
ECCN:-
Description:1个N沟道 耐压:60V 电流:115mA
Datasheet:
SPECIFICATION
Category
MOSFET
类型
1个N沟道
漏源电压(Vdss)
60V
连续漏极电流(Id)
115mA
功率(Pd)
150mW
导通电阻(RDS(on)@Vgs,Id)
7.5Ω@10V,500mA
阈值电压(Vgs(th)@Id)
1V@250uA
Shop:
1001
Settle
Cooperation
QTY[pcs]
Price[CNY/pcs]
20+
0.132318
200+
0.107467
600+
0.093661
3000+
0.076377
9000+
0.069197
21000+
0.065332
QTY(Multiplicity:20):
Stock:
3,000
Mpq:
3000 (圆盘)
Delivery:
2-5 Business Day
Total:
2.65

C004615542 2N7002T is designed and produced by Tak Cheong(德昌), and is available for sale in the Discrete Semiconductor-Transistor-MOSFET of Yuanjingcheng Supply Chain Co., Ltd. https://www.szyjc.com, and can be purchased and ordered through the original manufacturer/agent and other formal channels. C004615542 2N7002T reference price ¥0.132318,real-time inventory 3000. SOT-523-3 类型: 1个N沟道, 漏源电压(Vdss): 60V, 连续漏极电流(Id): 115mA, 功率(Pd): 150mW, 导通电阻(RDS(on)@Vgs,Id): 7.5Ω@10V,500mA, 阈值电压(Vgs(th)@Id): 1V@250uA. You can download the Chinese information, pin diagram, datasheet data manual function manual of 2N7002T, and check the real-time inventory, price, and delivery date. In special cases, you can make inquiries for quotations, one-click purchases of bom, and selection substitutions. The platform provides data API docking, real-time inventory VMI services, and online EDI transactions.

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