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HT65NF06ASZ

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Mfr.:Htcsemi(海天芯)
Mfr. Part #:
YJC. No:
Package:TO-263
ECCN:-
Description:1个N沟道 耐压:60V 电流:65A
Datasheet:
Datasheet
SPECIFICATION
Category
MOSFET
类型
1个N沟道
漏源电压(Vdss)
60V
连续漏极电流(Id)
65A
功率(Pd)
120W
导通电阻(RDS(on)@Vgs,Id)
15mΩ@10V,25A
阈值电压(Vgs(th)@Id)
4V@250uA
栅极电荷(Qg@Vgs)
32nC@10V
输入电容(Ciss@Vds)
1.05nF@25V
反向传输电容(Crss@Vds)
70pF@25V
工作温度
-55℃~+175℃@(Tj)
Shop:
1001
Settle
Cooperation
QTY[pcs]
Price[CNY/pcs]
1+
3.62
10+
2.74
30+
2.31
100+
1.87
QTY(Multiplicity:1):
Stock:
933
Mpq:
500 (圆盘)
Delivery:
2-5 Business Day
Total:
3.62
C004615945 HT65NF06ASZ is designed and produced by Htcsemi(海天芯), and is available for sale in the Discrete Semiconductor-Transistor-MOSFET of Yuanjingcheng Supply Chain Co., Ltd. https://www.szyjc.com, and can be purchased and ordered through the original manufacturer/agent and other formal channels. C004615945 HT65NF06ASZ reference price ¥3.62,real-time inventory 933. TO-263 类型: 1个N沟道, 漏源电压(Vdss): 60V, 连续漏极电流(Id): 65A, 功率(Pd): 120W, 导通电阻(RDS(on)@Vgs,Id): 15mΩ@10V,25A, 阈值电压(Vgs(th)@Id): 4V@250uA, 栅极电荷(Qg@Vgs): 32nC@10V, 输入电容(Ciss@Vds): 1.05nF@25V, 反向传输电容(Crss@Vds): 70pF@25V, 工作温度: -55℃~+175℃@(Tj). You can download the Chinese information, pin diagram, datasheet data manual function manual of HT65NF06ASZ, and check the real-time inventory, price, and delivery date. In special cases, you can make inquiries for quotations, one-click purchases of bom, and selection substitutions. The platform provides data API docking, real-time inventory VMI services, and online EDI transactions.
Datasheet
RFQ
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