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RBN75H65T1FPQ-A0#CB0

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产商:Renesas(瑞萨)
型号:
编号:
封装:TO-247A
海关编码:-
参数描述:耐压:650V 电流:150A
数据手册:
规格
Category
IGBT Tube
集射极击穿电压(Vces)
650V
集电极电流(Ic)
150A
功率(Pd)
312W
栅极阈值电压(Vge(th)@Ic)
2V@15V,75A
栅极电荷(Qg@Ic,Vge)
54nC
开启延迟时间(Td(on))
29ns
关断延迟时间(Td(off))
113ns
导通损耗(Eon)
1.6mJ
关断损耗(Eoff)
1mJ
反向恢复时间(Trr)
72ns
店铺:
1001
入驻
合作库存
数量[pcs]
单价[CNY/pcs]
1+
78.01
200+
30.19
500+
29.13
1000+
28.61
数量(递增量:1):
库存:
20,000
最小包装量:
25 (管)
交付周期:
2-5 工作日
共:
78.01

C005359318 RBN75H65T1FPQ-A0#CB0 is designed and produced by Renesas(瑞萨), and is available for sale in the Discrete Semiconductor-Transistor-IGBT Tube of Yuanjingcheng Supply Chain Co., Ltd. https://www.szyjc.com, and can be purchased and ordered through the original manufacturer/agent and other formal channels. C005359318 RBN75H65T1FPQ-A0#CB0 reference price ¥78.01,real-time inventory 20000. TO-247A 集射极击穿电压(Vces): 650V, 集电极电流(Ic): 150A, 功率(Pd): 312W, 栅极阈值电压(Vge(th)@Ic): 2V@15V,75A, 栅极电荷(Qg@Ic,Vge): 54nC, 开启延迟时间(Td(on)): 29ns, 关断延迟时间(Td(off)): 113ns, 导通损耗(Eon): 1.6mJ, 关断损耗(Eoff): 1mJ, 反向恢复时间(Trr): 72ns. You can download the Chinese information, pin diagram, datasheet data manual function manual of RBN75H65T1FPQ-A0#CB0, and check the real-time inventory, price, and delivery date. In special cases, you can make inquiries for quotations, one-click purchases of bom, and selection substitutions. The platform provides data API docking, real-time inventory VMI services, and online EDI transactions.

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