C005359319 RJP60F4DPM-00#T1 is designed and produced by Renesas(瑞萨), and is available for sale in the Discrete Semiconductor Transistor IGBT Tube of Yuanjingcheng Supply Chain Co., Ltd. https://www.szyjc.com. The package is TO-3PFM, and can be purchased and ordered through the original manufacturer/agent and other formal channels. SZYJC can view real-time inventory, tiered prices, and delivery delivery dates.

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RJP60F4DPM-00#T1

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Mfr.:	Renesas(瑞萨)
Mfr. Part #:
YJC. No:
Package:	TO-3PFM
ECCN:	-
Description:	耐压:600V 电流:60A
Datasheet:

SPECIFICATION

Category

IGBT Tube

集射极击穿电压(Vces)

600V

集电极电流(Ic)

60A

功率(Pd)

41.2W

栅极阈值电压(Vge(th)@Ic)

1.82V@15V,30A

开启延迟时间(Td(on))

45ns

关断延迟时间(Td(off))

70ns

Shop:

1001

Settle

Cooperation

QTY[pcs]

Price[CNY/pcs]

80.91

200+

32.29

500+

31.21

1000+

30.67

QTY(Multiplicity:1):

Stock:

Mpq:

1 (管)

Delivery:

2-5 Business Day

Total:

￥80.91

C005359319 RJP60F4DPM-00#T1 is designed and produced by Renesas(瑞萨), and is available for sale in the Discrete Semiconductor-Transistor-IGBT Tube of Yuanjingcheng Supply Chain Co., Ltd. https://www.szyjc.com, and can be purchased and ordered through the original manufacturer/agent and other formal channels. C005359319 RJP60F4DPM-00#T1 reference price ￥80.91，real-time inventory 1. TO-3PFM 集射极击穿电压(Vces): 600V, 集电极电流(Ic): 60A, 功率(Pd): 41.2W, 栅极阈值电压(Vge(th)@Ic): 1.82V@15V,30A, 开启延迟时间(Td(on)): 45ns, 关断延迟时间(Td(off)): 70ns. You can download the Chinese information, pin diagram, datasheet data manual function manual of RJP60F4DPM-00#T1, and check the real-time inventory, price, and delivery date. In special cases, you can make inquiries for quotations, one-click purchases of bom, and selection substitutions. The platform provides data API docking, real-time inventory VMI services, and online EDI transactions.

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