BT25T120CKR

产品图片仅供参考，可能与产品实物不同，但不会改变其基本特征。

产商:	Crhj(华晶)
型号:	BT25T120CKR
编号:	C005359322
封装:	TO-247-3
海关编码:	-
参数描述:	耐压:1.2kV 电流:50A
数据手册:	数据手册

规格

Category

IGBT Tube

集射极击穿电压(Vces)

1.2kV

集电极电流(Ic)

50A

功率(Pd)

208W

正向压降(Vf@If)

2.7V@25A

集射极饱和电压(VCE(sat)@Ic,Vge)

1.95V@25A,15V

栅极阈值电压(Vge(th)@Ic)

5.8V@250uA

栅极电荷(Qg@Ic,Vge)

145nC@25A,15V

输入电容(Cies@Vce)

2.37nF@30V

开启延迟时间(Td(on))

34ns

关断延迟时间(Td(off))

198ns

导通损耗(Eon)

1.88mJ

关断损耗(Eoff)

0.95mJ

店铺:

1001

入驻

合作库存

数量[pcs]

单价[CNY/pcs]

1+

11.22

10+

9.82

30+

8.94

100+

8.039999

500+

7.63

1000+

7.45

数量(递增量:1):

库存:

25

+-

加入购物车

询价

最小包装量:

25 (管)

交付周期:

2-5 工作日

共:

￥11.22

C005359322 BT25T120CKR is designed and produced by Crhj(华晶), and is available for sale in the Discrete Semiconductor-Transistor-IGBT Tube of Yuanjingcheng Supply Chain Co., Ltd. https://www.szyjc.com, and can be purchased and ordered through the original manufacturer/agent and other formal channels. C005359322 BT25T120CKR reference price ￥11.22，real-time inventory 25. TO-247-3 集射极击穿电压(Vces): 1.2kV, 集电极电流(Ic): 50A, 功率(Pd): 208W, 正向压降(Vf@If): 2.7V@25A, 集射极饱和电压(VCE(sat)@Ic,Vge): 1.95V@25A,15V, 栅极阈值电压(Vge(th)@Ic): 5.8V@250uA, 栅极电荷(Qg@Ic,Vge): 145nC@25A,15V, 输入电容(Cies@Vce): 2.37nF@30V, 开启延迟时间(Td(on)): 34ns, 关断延迟时间(Td(off)): 198ns, 导通损耗(Eon): 1.88mJ, 关断损耗(Eoff): 0.95mJ. You can download the Chinese information, pin diagram, datasheet data manual function manual of BT25T120CKR, and check the real-time inventory, price, and delivery date. In special cases, you can make inquiries for quotations, one-click purchases of bom, and selection substitutions. The platform provides data API docking, real-time inventory VMI services, and online EDI transactions.