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RGS80TS65DHRC11

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Mfr.:ROHM(罗姆)
Mfr. Part #:
YJC. No:
Package:TO-247N
ECCN:-
Description:耐压:650V 电流:73A
Datasheet:
Datasheet
SPECIFICATION
Category
IGBT Tube
IGBT类型
FS(场截止)
集射极击穿电压(Vces)
650V
集电极电流(Ic)
73A
功率(Pd)
272W
栅极阈值电压(Vge(th)@Ic)
2.1V@15V,40A
栅极电荷(Qg@Ic,Vge)
48nC
开启延迟时间(Td(on))
37ns
关断延迟时间(Td(off))
112ns
导通损耗(Eon)
1.05mJ
关断损耗(Eoff)
1.03mJ
反向恢复时间(Trr)
103ns
工作温度
-40℃~+175℃@(Tj)
Shop:
1001
Settle
Cooperation
QTY[pcs]
Price[CNY/pcs]
1+
29.35
10+
25.33
30+
22.94
90+
20.52
510+
19.41
990+
18.9
QTY(Multiplicity:1):
Stock:
30
Mpq:
30 (管)
Delivery:
2-5 Business Day
Total:
29.35
C005365288 RGS80TS65DHRC11 is designed and produced by ROHM(罗姆), and is available for sale in the Discrete Semiconductor-Transistor-IGBT Tube of Yuanjingcheng Supply Chain Co., Ltd. https://www.szyjc.com, and can be purchased and ordered through the original manufacturer/agent and other formal channels. C005365288 RGS80TS65DHRC11 reference price ¥29.35,real-time inventory 30. TO-247N IGBT类型: FS(场截止), 集射极击穿电压(Vces): 650V, 集电极电流(Ic): 73A, 功率(Pd): 272W, 栅极阈值电压(Vge(th)@Ic): 2.1V@15V,40A, 栅极电荷(Qg@Ic,Vge): 48nC, 开启延迟时间(Td(on)): 37ns, 关断延迟时间(Td(off)): 112ns, 导通损耗(Eon): 1.05mJ, 关断损耗(Eoff): 1.03mJ, 反向恢复时间(Trr): 103ns, 工作温度: -40℃~+175℃@(Tj). You can download the Chinese information, pin diagram, datasheet data manual function manual of RGS80TS65DHRC11, and check the real-time inventory, price, and delivery date. In special cases, you can make inquiries for quotations, one-click purchases of bom, and selection substitutions. The platform provides data API docking, real-time inventory VMI services, and online EDI transactions.
Datasheet
RFQ
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