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RGS80TSX2HRC11

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产品图片仅供参考,可能与产品实物不同,但不会改变其基本特征。
产商:ROHM(罗姆)
型号:
编号:
封装:TO-247N
海关编码:-
参数描述:耐压:1.2kV 电流:80A
数据手册:
规格
Category
IGBT Tube
IGBT类型
FS(场截止)
集射极击穿电压(Vces)
1.2kV
集电极电流(Ic)
80A
功率(Pd)
555W
栅极阈值电压(Vge(th)@Ic)
2.1V@15V,40A
栅极电荷(Qg@Ic,Vge)
104nC
开启延迟时间(Td(on))
49ns
关断延迟时间(Td(off))
199ns
导通损耗(Eon)
3mJ
关断损耗(Eoff)
3.1mJ
工作温度
-40℃~+175℃@(Tj)
店铺:
1001
入驻
合作库存
数量[pcs]
单价[CNY/pcs]
1+
21.66
10+
18.9
30+
17.26
100+
15.61
500+
14.84
1000+
14.5
数量(递增量:1):
库存:
36
最小包装量:
30 (管)
交付周期:
2-5 工作日
共:
21.66
C005373032 RGS80TSX2HRC11 is designed and produced by ROHM(罗姆), and is available for sale in the Discrete Semiconductor-Transistor-IGBT Tube of Yuanjingcheng Supply Chain Co., Ltd. https://www.szyjc.com, and can be purchased and ordered through the original manufacturer/agent and other formal channels. C005373032 RGS80TSX2HRC11 reference price ¥21.66,real-time inventory 36. TO-247N IGBT类型: FS(场截止), 集射极击穿电压(Vces): 1.2kV, 集电极电流(Ic): 80A, 功率(Pd): 555W, 栅极阈值电压(Vge(th)@Ic): 2.1V@15V,40A, 栅极电荷(Qg@Ic,Vge): 104nC, 开启延迟时间(Td(on)): 49ns, 关断延迟时间(Td(off)): 199ns, 导通损耗(Eon): 3mJ, 关断损耗(Eoff): 3.1mJ, 工作温度: -40℃~+175℃@(Tj). You can download the Chinese information, pin diagram, datasheet data manual function manual of RGS80TSX2HRC11, and check the real-time inventory, price, and delivery date. In special cases, you can make inquiries for quotations, one-click purchases of bom, and selection substitutions. The platform provides data API docking, real-time inventory VMI services, and online EDI transactions.
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