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RGS80TSX2DHRC11

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Mfr.:ROHM(罗姆)
Mfr. Part #:
YJC. No:
Package:TO-247-3
ECCN:-
Description:耐压:1.2kV 电流:80A
Datasheet:
Datasheet
SPECIFICATION
Category
IGBT Tube
IGBT类型
FS(场截止)
集射极击穿电压(Vces)
1.2kV
集电极电流(Ic)
80A
功率(Pd)
555W
栅极阈值电压(Vge(th)@Ic)
2.1V@15V,40A
栅极电荷(Qg@Ic,Vge)
104nC
开启延迟时间(Td(on))
49ns
关断延迟时间(Td(off))
199ns
导通损耗(Eon)
3mJ
关断损耗(Eoff)
3.1mJ
反向恢复时间(Trr)
198ns
工作温度
-40℃~+175℃@(Tj)
Shop:
1001
Settle
Cooperation
QTY[pcs]
Price[CNY/pcs]
1+
33.69
10+
28.91
30+
22.58
100+
19.7
500+
18.38
1000+
17.78
QTY(Multiplicity:1):
Stock:
364
Mpq:
30 (管)
Delivery:
2-5 Business Day
Total:
33.69
C005373930 RGS80TSX2DHRC11 is designed and produced by ROHM(罗姆), and is available for sale in the Discrete Semiconductor-Transistor-IGBT Tube of Yuanjingcheng Supply Chain Co., Ltd. https://www.szyjc.com, and can be purchased and ordered through the original manufacturer/agent and other formal channels. C005373930 RGS80TSX2DHRC11 reference price ¥33.69,real-time inventory 364. TO-247-3 IGBT类型: FS(场截止), 集射极击穿电压(Vces): 1.2kV, 集电极电流(Ic): 80A, 功率(Pd): 555W, 栅极阈值电压(Vge(th)@Ic): 2.1V@15V,40A, 栅极电荷(Qg@Ic,Vge): 104nC, 开启延迟时间(Td(on)): 49ns, 关断延迟时间(Td(off)): 199ns, 导通损耗(Eon): 3mJ, 关断损耗(Eoff): 3.1mJ, 反向恢复时间(Trr): 198ns, 工作温度: -40℃~+175℃@(Tj). You can download the Chinese information, pin diagram, datasheet data manual function manual of RGS80TSX2DHRC11, and check the real-time inventory, price, and delivery date. In special cases, you can make inquiries for quotations, one-click purchases of bom, and selection substitutions. The platform provides data API docking, real-time inventory VMI services, and online EDI transactions.
Datasheet
RFQ
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