KGF40N65KDC

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Mfr.:	KEC
Mfr. Part #:	KGF40N65KDC
YJC. No:	C005375474
Package:	TO-247-3
ECCN:	-
Description:	耐压:650V 电流:80A
Datasheet:	Datasheet

SPECIFICATION

Category

IGBT Tube

IGBT类型

FS(场截止)

集射极击穿电压(Vces)

650V

集电极电流(Ic)

80A

功率(Pd)

208W

正向压降(Vf@If)

1.91V@20A

集射极饱和电压(VCE(sat)@Ic,Vge)

1.75V@40A,15V

栅极阈值电压(Vge(th)@Ic)

6.2V@4mA

栅极电荷(Qg@Ic,Vge)

90nC@40A,15V

输入电容(Cies@Vce)

2.3nF@30V

开启延迟时间(Td(on))

60ns

关断延迟时间(Td(off))

110ns

导通损耗(Eon)

0.95mJ

关断损耗(Eoff)

0.55mJ

反向恢复时间(Trr)

97ns

Shop:

1001

Settle

Cooperation

QTY[pcs]

Price[CNY/pcs]

1+

13.07

10+

11.44

30+

9.42

100+

8.369999

500+

7.9

QTY(Multiplicity:1):

Stock:

48

+-

Add To Cart

Quota

Mpq:

30 (管)

Delivery:

2-5 Business Day

Total:

￥13.07

C005375474 KGF40N65KDC is designed and produced by KEC, and is available for sale in the Discrete Semiconductor-Transistor-IGBT Tube of Yuanjingcheng Supply Chain Co., Ltd. https://www.szyjc.com, and can be purchased and ordered through the original manufacturer/agent and other formal channels. C005375474 KGF40N65KDC reference price ￥13.07，real-time inventory 48. TO-247-3 IGBT类型: FS(场截止), 集射极击穿电压(Vces): 650V, 集电极电流(Ic): 80A, 功率(Pd): 208W, 正向压降(Vf@If): 1.91V@20A, 集射极饱和电压(VCE(sat)@Ic,Vge): 1.75V@40A,15V, 栅极阈值电压(Vge(th)@Ic): 6.2V@4mA, 栅极电荷(Qg@Ic,Vge): 90nC@40A,15V, 输入电容(Cies@Vce): 2.3nF@30V, 开启延迟时间(Td(on)): 60ns, 关断延迟时间(Td(off)): 110ns, 导通损耗(Eon): 0.95mJ, 关断损耗(Eoff): 0.55mJ, 反向恢复时间(Trr): 97ns. You can download the Chinese information, pin diagram, datasheet data manual function manual of KGF40N65KDC, and check the real-time inventory, price, and delivery date. In special cases, you can make inquiries for quotations, one-click purchases of bom, and selection substitutions. The platform provides data API docking, real-time inventory VMI services, and online EDI transactions.