logo
我的购物车

BIDW50N65T

img
产品图片仅供参考,可能与产品实物不同,但不会改变其基本特征。
产商:Bourns(博恩思)
型号:
编号:
封装:TO-247
海关编码:-
参数描述:耐压:650V 电流:100A
数据手册:
规格
Category
IGBT Tube
IGBT类型
FS(场截止)
集射极击穿电压(Vces)
650V
集电极电流(Ic)
100A
功率(Pd)
416W
栅极阈值电压(Vge(th)@Ic)
2.2V@15V,50A
栅极电荷(Qg@Ic,Vge)
123nC
开启延迟时间(Td(on))
37ns
关断延迟时间(Td(off))
125ns
导通损耗(Eon)
3mJ
关断损耗(Eoff)
1.1mJ
反向恢复时间(Trr)
37.5ns
工作温度
-55℃~+150℃@(Tj)
店铺:
1001
入驻
合作库存
数量[pcs]
单价[CNY/pcs]
1+
45.52
210+
18.16
510+
17.56
990+
17.26
数量(递增量:1):
库存:
30
最小包装量:
30 (管)
交付周期:
2-5 工作日
共:
45.52

C005480358 BIDW50N65T is designed and produced by Bourns(博恩思), and is available for sale in the Discrete Semiconductor-Transistor-IGBT Tube of Yuanjingcheng Supply Chain Co., Ltd. https://www.szyjc.com, and can be purchased and ordered through the original manufacturer/agent and other formal channels. C005480358 BIDW50N65T reference price ¥45.52,real-time inventory 30. TO-247 IGBT类型: FS(场截止), 集射极击穿电压(Vces): 650V, 集电极电流(Ic): 100A, 功率(Pd): 416W, 栅极阈值电压(Vge(th)@Ic): 2.2V@15V,50A, 栅极电荷(Qg@Ic,Vge): 123nC, 开启延迟时间(Td(on)): 37ns, 关断延迟时间(Td(off)): 125ns, 导通损耗(Eon): 3mJ, 关断损耗(Eoff): 1.1mJ, 反向恢复时间(Trr): 37.5ns, 工作温度: -55℃~+150℃@(Tj). You can download the Chinese information, pin diagram, datasheet data manual function manual of BIDW50N65T, and check the real-time inventory, price, and delivery date. In special cases, you can make inquiries for quotations, one-click purchases of bom, and selection substitutions. The platform provides data API docking, real-time inventory VMI services, and online EDI transactions.

RFQ
登录显示更多福利!