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NTE3311

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产品图片仅供参考,可能与产品实物不同,但不会改变其基本特征。
产商:NTE Electronics
型号:
编号:
封装:TO-3P
海关编码:-
参数描述:耐压:600V 电流:25A
数据手册:
规格
Category
IGBT Tube
集射极击穿电压(Vces)
600V
集电极电流(Ic)
25A
功率(Pd)
150W
栅极阈值电压(Vge(th)@Ic)
4V@15V,25A
开启延迟时间(Td(on))
400ns
关断延迟时间(Td(off))
500ns
店铺:
1001
入驻
合作库存
数量[pcs]
单价[CNY/pcs]
1+
203.48
200+
81.19
500+
78.48
1000+
77.14
数量(递增量:1):
库存:
1
最小包装量:
1 (袋)
交付周期:
2-5 工作日
共:
203.48

C005526372 NTE3311 is designed and produced by NTE Electronics, and is available for sale in the Discrete Semiconductor-Transistor-IGBT Tube of Yuanjingcheng Supply Chain Co., Ltd. https://www.szyjc.com, and can be purchased and ordered through the original manufacturer/agent and other formal channels. C005526372 NTE3311 reference price ¥203.48,real-time inventory 1. TO-3P 集射极击穿电压(Vces): 600V, 集电极电流(Ic): 25A, 功率(Pd): 150W, 栅极阈值电压(Vge(th)@Ic): 4V@15V,25A, 开启延迟时间(Td(on)): 400ns, 关断延迟时间(Td(off)): 500ns. You can download the Chinese information, pin diagram, datasheet data manual function manual of NTE3311, and check the real-time inventory, price, and delivery date. In special cases, you can make inquiries for quotations, one-click purchases of bom, and selection substitutions. The platform provides data API docking, real-time inventory VMI services, and online EDI transactions.

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