AOD5B65M1

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Mfr.:	AOS(美国万代)
Mfr. Part #:	AOD5B65M1
YJC. No:	C005526493
Package:	TO-252-2(DPAK)
ECCN:	-
Description:	耐压:650V 电流:10A
Datasheet:	Datasheet

SPECIFICATION

Category

IGBT Tube

集射极击穿电压(Vces)

650V

集电极电流(Ic)

10A

功率(Pd)

69W

栅极阈值电压(Vge(th)@Ic)

1.98V@15V,5A

栅极电荷(Qg@Ic,Vge)

14nC

开启延迟时间(Td(on))

8.5ns

关断延迟时间(Td(off))

106ns

导通损耗(Eon)

0.08mJ

关断损耗(Eoff)

0.07mJ

反向恢复时间(Trr)

195ns

工作温度

-55℃~+150℃@(Tj)

Shop:

1001

Settle

Cooperation

QTY[pcs]

Price[CNY/pcs]

1+

4.48

10+

3.69

30+

3.29

100+

2.9

500+

2.089999

1000+

1.97

QTY(Multiplicity:1):

Stock:

2,971

+-

Add To Cart

Quota

Mpq:

2500 (圆盘)

Delivery:

2-5 Business Day

Total:

￥4.48

C005526493 AOD5B65M1 is designed and produced by AOS(美国万代), and is available for sale in the Discrete Semiconductor-Transistor-IGBT Tube of Yuanjingcheng Supply Chain Co., Ltd. https://www.szyjc.com, and can be purchased and ordered through the original manufacturer/agent and other formal channels. C005526493 AOD5B65M1 reference price ￥4.48，real-time inventory 2971. TO-252-2(DPAK) 集射极击穿电压(Vces): 650V, 集电极电流(Ic): 10A, 功率(Pd): 69W, 栅极阈值电压(Vge(th)@Ic): 1.98V@15V,5A, 栅极电荷(Qg@Ic,Vge): 14nC, 开启延迟时间(Td(on)): 8.5ns, 关断延迟时间(Td(off)): 106ns, 导通损耗(Eon): 0.08mJ, 关断损耗(Eoff): 0.07mJ, 反向恢复时间(Trr): 195ns, 工作温度: -55℃~+150℃@(Tj). You can download the Chinese information, pin diagram, datasheet data manual function manual of AOD5B65M1, and check the real-time inventory, price, and delivery date. In special cases, you can make inquiries for quotations, one-click purchases of bom, and selection substitutions. The platform provides data API docking, real-time inventory VMI services, and online EDI transactions.