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VBZM8N60

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Mfr.:VBsemi(微碧)
Mfr. Part #:
YJC. No:
Package:TO-220AB-3
ECCN:-
Description:1个N沟道 耐压:600V 电流:8A
Datasheet:
SPECIFICATION
Category
MOSFET
类型
1个N沟道
漏源电压(Vdss)
600V
连续漏极电流(Id)
8A
导通电阻(RDS(on)@Vgs,Id)
780mΩ@10V,8A
Shop:
1001
Settle
Cooperation
QTY[pcs]
Price[CNY/pcs]
1+
5.1
10+
4.25
50+
3.69
100+
3.27
500+
3.01
1000+
2.88
QTY(Multiplicity:1):
Stock:
50
Mpq:
50 (管)
Delivery:
2-5 Business Day
Total:
5.10

C005645385 VBZM8N60 is designed and produced by VBsemi(微碧), and is available for sale in the Discrete Semiconductor-Transistor-MOSFET of Yuanjingcheng Supply Chain Co., Ltd. https://www.szyjc.com, and can be purchased and ordered through the original manufacturer/agent and other formal channels. C005645385 VBZM8N60 reference price ¥5.1,real-time inventory 50. TO-220AB-3 类型: 1个N沟道, 漏源电压(Vdss): 600V, 连续漏极电流(Id): 8A, 导通电阻(RDS(on)@Vgs,Id): 780mΩ@10V,8A. You can download the Chinese information, pin diagram, datasheet data manual function manual of VBZM8N60, and check the real-time inventory, price, and delivery date. In special cases, you can make inquiries for quotations, one-click purchases of bom, and selection substitutions. The platform provides data API docking, real-time inventory VMI services, and online EDI transactions.

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