HS8K1TB

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Mfr.:	ROHM(罗姆)
Mfr. Part #:	HS8K1TB
YJC. No:	C005764375
Package:	UDFN-8-EP
ECCN:	-
Description:	2个N沟道 耐压:30V 电流:10A 电流:11A
Datasheet:

SPECIFICATION

Category

MOSFET

类型

2个N沟道

漏源电压(Vdss)

30V

连续漏极电流(Id)

10A；11A

功率(Pd)

2W

导通电阻(RDS(on)@Vgs,Id)

14.6mΩ@10A,10V；11.8mΩ@11A,10V

阈值电压(Vgs(th)@Id)

2.5V@1mA

栅极电荷(Qg@Vgs)

7.4nC@10V；6nC@10V

输入电容(Ciss@Vds)

429pF@15V；348pF@15V

Shop:

1001

Settle

Cooperation

QTY[pcs]

Price[CNY/pcs]

1+

22.2

200+

8.6

500+

8.289999

1000+

8.14

QTY(Multiplicity:1):

Stock:

3,000

+-

Add To Cart

Quota

Mpq:

3000 (圆盘)

Delivery:

2-5 Business Day

Total:

￥22.20

C005764375 HS8K1TB is designed and produced by ROHM(罗姆), and is available for sale in the Discrete Semiconductor-Transistor-MOSFET of Yuanjingcheng Supply Chain Co., Ltd. https://www.szyjc.com, and can be purchased and ordered through the original manufacturer/agent and other formal channels. C005764375 HS8K1TB reference price ￥22.2，real-time inventory 3000. UDFN-8-EP 类型: 2个N沟道, 漏源电压(Vdss): 30V, 连续漏极电流(Id): 10A；11A, 功率(Pd): 2W, 导通电阻(RDS(on)@Vgs,Id): 14.6mΩ@10A,10V；11.8mΩ@11A,10V, 阈值电压(Vgs(th)@Id): 2.5V@1mA, 栅极电荷(Qg@Vgs): 7.4nC@10V；6nC@10V, 输入电容(Ciss@Vds): 429pF@15V；348pF@15V. You can download the Chinese information, pin diagram, datasheet data manual function manual of HS8K1TB, and check the real-time inventory, price, and delivery date. In special cases, you can make inquiries for quotations, one-click purchases of bom, and selection substitutions. The platform provides data API docking, real-time inventory VMI services, and online EDI transactions.