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PUMZ1,115

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产品图片仅供参考,可能与产品实物不同,但不会改变其基本特征。
产商:Nexperia(安世)
型号:
编号:
封装:SOT-363
海关编码:-
参数描述:NPN+PNP 电流:100mA 耐压:40V
数据手册:
数据手册
规格
Category
Bipolar Transistor (triode)
晶体管类型
NPN+PNP
集电极电流(Ic)
100mA
集射极击穿电压(Vceo)
40V
功率(Pd)
300mW
直流电流增益(hFE@Ic,Vce)
120@1mA,6V
特征频率(fT)
100MHz
集电极截止电流(Icbo)
100nA
集电极-发射极饱和电压(VCE(sat)@Ic,Ib)
200mV@50mA,5mA
店铺:
1001
入驻
合作库存
数量[pcs]
单价[CNY/pcs]
10+
0.33988
100+
0.27388
300+
0.24088
3000+
0.21613
6000+
0.19633
9000+
0.18643
数量(递增量:10):
库存:
3,000
最小包装量:
3000 (卷)
交付周期:
2-5 工作日
共:
3.40
C005768528 PUMZ1,115 is designed and produced by Nexperia(安世), and is available for sale in the Discrete Semiconductor-Transistor-Bipolar Transistor (triode) of Yuanjingcheng Supply Chain Co., Ltd. https://www.szyjc.com, and can be purchased and ordered through the original manufacturer/agent and other formal channels. C005768528 PUMZ1,115 reference price ¥0.33988,real-time inventory 3000. SOT-363 晶体管类型: NPN+PNP, 集电极电流(Ic): 100mA, 集射极击穿电压(Vceo): 40V, 功率(Pd): 300mW, 直流电流增益(hFE@Ic,Vce): 120@1mA,6V, 特征频率(fT): 100MHz, 集电极截止电流(Icbo): 100nA, 集电极-发射极饱和电压(VCE(sat)@Ic,Ib): 200mV@50mA,5mA. You can download the Chinese information, pin diagram, datasheet data manual function manual of PUMZ1,115, and check the real-time inventory, price, and delivery date. In special cases, you can make inquiries for quotations, one-click purchases of bom, and selection substitutions. The platform provides data API docking, real-time inventory VMI services, and online EDI transactions.
数据手册
RFQ
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