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NSVMMBT5088LT3G

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产品图片仅供参考,可能与产品实物不同,但不会改变其基本特征。
产商:ON(安森美)
型号:
编号:
封装:SOT-23
海关编码:-
参数描述:耐压:30V 电流:50mA NPN
数据手册:
规格
Category
Bipolar Transistor (triode)
晶体管类型
NPN
集电极电流(Ic)
50mA
集射极击穿电压(Vceo)
30V
功率(Pd)
225mW
直流电流增益(hFE@Ic,Vce)
300@100uA,5V
特征频率(fT)
50MHz
集电极截止电流(Icbo)
50nA
集电极-发射极饱和电压(VCE(sat)@Ic,Ib)
500mV@10mA,1mA
工作温度
-55℃~+150℃@(Tj)
店铺:
1001
入驻
合作库存
数量[pcs]
单价[CNY/pcs]
1+
0.88293
200+
0.341683
500+
0.329675
1000+
0.323741
数量(递增量:1):
库存:
10,000
最小包装量:
10000 (圆盘)
交付周期:
2-5 工作日
共:
0.89

C005826837 NSVMMBT5088LT3G is designed and produced by ON(安森美), and is available for sale in the Discrete Semiconductor-Transistor-Bipolar Transistor (triode) of Yuanjingcheng Supply Chain Co., Ltd. https://www.szyjc.com, and can be purchased and ordered through the original manufacturer/agent and other formal channels. C005826837 NSVMMBT5088LT3G reference price ¥0.88293,real-time inventory 10000. SOT-23 晶体管类型: NPN, 集电极电流(Ic): 50mA, 集射极击穿电压(Vceo): 30V, 功率(Pd): 225mW, 直流电流增益(hFE@Ic,Vce): 300@100uA,5V, 特征频率(fT): 50MHz, 集电极截止电流(Icbo): 50nA, 集电极-发射极饱和电压(VCE(sat)@Ic,Ib): 500mV@10mA,1mA, 工作温度: -55℃~+150℃@(Tj). You can download the Chinese information, pin diagram, datasheet data manual function manual of NSVMMBT5088LT3G, and check the real-time inventory, price, and delivery date. In special cases, you can make inquiries for quotations, one-click purchases of bom, and selection substitutions. The platform provides data API docking, real-time inventory VMI services, and online EDI transactions.

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