PJD35P03_L2_00001

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Mfr.:	PANJIT(强茂)
Mfr. Part #:	PJD35P03_L2_00001
YJC. No:	C006010833
Package:	TO-252
ECCN:	-
Description:	1个P沟道 耐压:30V 电流:8.4A 电流:35A
Datasheet:	Datasheet

SPECIFICATION

Category

MOSFET

类型

1个P沟道

漏源电压(Vdss)

30V

连续漏极电流(Id)

8.4A；35A

功率(Pd)

2W；35W

导通电阻(RDS(on)@Vgs,Id)

19mΩ@8A,10V

阈值电压(Vgs(th)@Id)

2.5V@250uA

栅极电荷(Qg@Vgs)

11nC@4.5V

输入电容(Ciss@Vds)

1.169nF@15V

工作温度

-55℃~+150℃@(Tj)

Shop:

1001

Settle

Cooperation

QTY[pcs]

Price[CNY/pcs]

1+

2.8632

200+

1.1425

500+

1.1043

1000+

1.0854

QTY(Multiplicity:1):

Stock:

3,000

+-

Add To Cart

Quota

Mpq:

3000 (圆盘)

Delivery:

2-5 Business Day

Total:

￥2.87

C006010833 PJD35P03_L2_00001 is designed and produced by PANJIT(强茂), and is available for sale in the Discrete Semiconductor-Transistor-MOSFET of Yuanjingcheng Supply Chain Co., Ltd. https://www.szyjc.com, and can be purchased and ordered through the original manufacturer/agent and other formal channels. C006010833 PJD35P03_L2_00001 reference price ￥2.8632，real-time inventory 3000. TO-252 类型: 1个P沟道, 漏源电压(Vdss): 30V, 连续漏极电流(Id): 8.4A；35A, 功率(Pd): 2W；35W, 导通电阻(RDS(on)@Vgs,Id): 19mΩ@8A,10V, 阈值电压(Vgs(th)@Id): 2.5V@250uA, 栅极电荷(Qg@Vgs): 11nC@4.5V, 输入电容(Ciss@Vds): 1.169nF@15V, 工作温度: -55℃~+150℃@(Tj). You can download the Chinese information, pin diagram, datasheet data manual function manual of PJD35P03_L2_00001, and check the real-time inventory, price, and delivery date. In special cases, you can make inquiries for quotations, one-click purchases of bom, and selection substitutions. The platform provides data API docking, real-time inventory VMI services, and online EDI transactions.