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NSVMMBTA05LT1G

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Mfr.:ON(安森美)
Mfr. Part #:
YJC. No:
Package:SOT-23-3
ECCN:-
Description:耐压:60V 电流:500mA NPN
Datasheet:
Datasheet
SPECIFICATION
Category
Bipolar Transistor (triode)
晶体管类型
NPN
集电极电流(Ic)
500mA
集射极击穿电压(Vceo)
60V
功率(Pd)
225mW
直流电流增益(hFE@Ic,Vce)
100@100mA,1V
特征频率(fT)
100MHz
集电极截止电流(Icbo)
100nA
集电极-发射极饱和电压(VCE(sat)@Ic,Ib)
250mV@10mA,100mA
工作温度
-55℃~+150℃@(Tj)
Shop:
1001
Settle
Cooperation
QTY[pcs]
Price[CNY/pcs]
5+
0.748382
50+
0.600918
150+
0.527186
500+
0.471887
3000+
0.427647
6000+
0.405528
QTY(Multiplicity:5):
Stock:
3,000
Mpq:
3000 (圆盘)
Delivery:
2-5 Business Day
Total:
3.75
C006050456 NSVMMBTA05LT1G is designed and produced by ON(安森美), and is available for sale in the Discrete Semiconductor-Transistor-Bipolar Transistor (triode) of Yuanjingcheng Supply Chain Co., Ltd. https://www.szyjc.com, and can be purchased and ordered through the original manufacturer/agent and other formal channels. C006050456 NSVMMBTA05LT1G reference price ¥0.748382,real-time inventory 3000. SOT-23-3 晶体管类型: NPN, 集电极电流(Ic): 500mA, 集射极击穿电压(Vceo): 60V, 功率(Pd): 225mW, 直流电流增益(hFE@Ic,Vce): 100@100mA,1V, 特征频率(fT): 100MHz, 集电极截止电流(Icbo): 100nA, 集电极-发射极饱和电压(VCE(sat)@Ic,Ib): 250mV@10mA,100mA, 工作温度: -55℃~+150℃@(Tj). You can download the Chinese information, pin diagram, datasheet data manual function manual of NSVMMBTA05LT1G, and check the real-time inventory, price, and delivery date. In special cases, you can make inquiries for quotations, one-click purchases of bom, and selection substitutions. The platform provides data API docking, real-time inventory VMI services, and online EDI transactions.
Datasheet
RFQ
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