2SB1386T100R

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Mfr.:	ROHM(罗姆)
Mfr. Part #:	2SB1386T100R
YJC. No:	C006574273
Package:	SOT-89
ECCN:	-
Description:	PNP 电流:5A 耐压:20V
Datasheet:	Datasheet

SPECIFICATION

Category

Bipolar Transistor (triode)

晶体管类型

PNP

集电极电流(Ic)

5A

集射极击穿电压(Vceo)

20V

功率(Pd)

2W

直流电流增益(hFE@Ic,Vce)

180@500mA,2V

特征频率(fT)

120MHz

集电极截止电流(Icbo)

500nA

集电极-发射极饱和电压(VCE(sat)@Ic,Ib)

350mV@4A,100mA

Shop:

1001

Settle

Cooperation

QTY[pcs]

Price[CNY/pcs]

5+

1.2161

50+

0.9902

150+

0.8933

1000+

0.7725

2000+

0.7187

5000+

0.6865

QTY(Multiplicity:1):

Stock:

30,000

+-

Add To Cart

Quota

Mpq:

1000 (圆盘)

Delivery:

2-5 Business Day

Total:

￥Infinity

C006574273 2SB1386T100R is designed and produced by ROHM(罗姆), and is available for sale in the Discrete Semiconductor-Transistor-Bipolar Transistor (triode) of Yuanjingcheng Supply Chain Co., Ltd. https://www.szyjc.com, and can be purchased and ordered through the original manufacturer/agent and other formal channels. C006574273 2SB1386T100R reference price ￥1.2161，real-time inventory 30000. SOT-89 晶体管类型: PNP, 集电极电流(Ic): 5A, 集射极击穿电压(Vceo): 20V, 功率(Pd): 2W, 直流电流增益(hFE@Ic,Vce): 180@500mA,2V, 特征频率(fT): 120MHz, 集电极截止电流(Icbo): 500nA, 集电极-发射极饱和电压(VCE(sat)@Ic,Ib): 350mV@4A,100mA. You can download the Chinese information, pin diagram, datasheet data manual function manual of 2SB1386T100R, and check the real-time inventory, price, and delivery date. In special cases, you can make inquiries for quotations, one-click purchases of bom, and selection substitutions. The platform provides data API docking, real-time inventory VMI services, and online EDI transactions.