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2SB1386T100Q

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产品图片仅供参考,可能与产品实物不同,但不会改变其基本特征。
产商:ROHM(罗姆)
型号:
编号:
封装:SOT-89-3
海关编码:-
参数描述:PNP 电流:5A 耐压:20V
数据手册:
规格
Category
Bipolar Transistor (triode)
晶体管类型
PNP
集电极电流(Ic)
5A
集射极击穿电压(Vceo)
20V
功率(Pd)
2W
直流电流增益(hFE@Ic,Vce)
120@500mA,2V
特征频率(fT)
120MHz
集电极截止电流(Icbo)
500nA
集电极-发射极饱和电压(VCE(sat)@Ic,Ib)
350mV@4A,100mA
店铺:
1001
入驻
合作库存
数量[pcs]
单价[CNY/pcs]
1+
4.9
10+
4.8
30+
4.73
100+
4.66
数量(递增量:1):
库存:
1,000
最小包装量:
1000 (圆盘)
交付周期:
2-5 工作日
共:
4.90

C006575098 2SB1386T100Q is designed and produced by ROHM(罗姆), and is available for sale in the Discrete Semiconductor-Transistor-Bipolar Transistor (triode) of Yuanjingcheng Supply Chain Co., Ltd. https://www.szyjc.com, and can be purchased and ordered through the original manufacturer/agent and other formal channels. C006575098 2SB1386T100Q reference price ¥4.9,real-time inventory 1000. SOT-89-3 晶体管类型: PNP, 集电极电流(Ic): 5A, 集射极击穿电压(Vceo): 20V, 功率(Pd): 2W, 直流电流增益(hFE@Ic,Vce): 120@500mA,2V, 特征频率(fT): 120MHz, 集电极截止电流(Icbo): 500nA, 集电极-发射极饱和电压(VCE(sat)@Ic,Ib): 350mV@4A,100mA. You can download the Chinese information, pin diagram, datasheet data manual function manual of 2SB1386T100Q, and check the real-time inventory, price, and delivery date. In special cases, you can make inquiries for quotations, one-click purchases of bom, and selection substitutions. The platform provides data API docking, real-time inventory VMI services, and online EDI transactions.

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