C006575886 1N60L-TM3-VB is designed and produced by VBsemi(微碧), and is available for sale in the Discrete Semiconductor Transistor MOSFET of Yuanjingcheng Supply Chain Co., Ltd. https://www.szyjc.com. The package is TO-251, and can be purchased and ordered through the original manufacturer/agent and other formal channels. SZYJC can view real-time inventory, tiered prices, and delivery delivery dates.

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1N60L-TM3-VB

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Mfr.:	VBsemi(微碧)
Mfr. Part #:
YJC. No:
Package:	TO-251
ECCN:	-
Description:	1个N沟道耐压:650V 电流:2A
Datasheet:

SPECIFICATION

Category

MOSFET

类型

1个N沟道

漏源电压(Vdss)

650V

连续漏极电流(Id)

功率(Pd)

45W

导通电阻(RDS(on)@Vgs,Id)

5Ω@10V,1A

阈值电压(Vgs(th)@Id)

4V@250uA

Shop:

1001

Settle

Cooperation

QTY[pcs]

Price[CNY/pcs]

3.62

10+

3.01

30+

2.7

80+

2.4

480+

1.94

800+

1.84

QTY(Multiplicity:1):

Stock:

Mpq:

80 (管)

Delivery:

2-5 Business Day

Total:

￥3.62

C006575886 1N60L-TM3-VB is designed and produced by VBsemi(微碧), and is available for sale in the Discrete Semiconductor-Transistor-MOSFET of Yuanjingcheng Supply Chain Co., Ltd. https://www.szyjc.com, and can be purchased and ordered through the original manufacturer/agent and other formal channels. C006575886 1N60L-TM3-VB reference price ￥3.62，real-time inventory 80. TO-251 类型: 1个N沟道, 漏源电压(Vdss): 650V, 连续漏极电流(Id): 2A, 功率(Pd): 45W, 导通电阻(RDS(on)@Vgs,Id): 5Ω@10V,1A, 阈值电压(Vgs(th)@Id): 4V@250uA. You can download the Chinese information, pin diagram, datasheet data manual function manual of 1N60L-TM3-VB, and check the real-time inventory, price, and delivery date. In special cases, you can make inquiries for quotations, one-click purchases of bom, and selection substitutions. The platform provides data API docking, real-time inventory VMI services, and online EDI transactions.

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