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2N5551 C

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Mfr.:HL(豪林)
Mfr. Part #:
YJC. No:
Package:TO-92-3
ECCN:-
Description:耐压:160V 电流:600mA NPN C 档位150-250
Datasheet:
SPECIFICATION
Category
Bipolar Transistor (triode)
晶体管类型
NPN
集电极电流(Ic)
600mA
集射极击穿电压(Vceo)
160V
功率(Pd)
625mW
直流电流增益(hFE@Ic,Vce)
150@10mA,5V
特征频率(fT)
80MHz
集电极截止电流(Icbo)
100nA
集电极-发射极饱和电压(VCE(sat)@Ic,Ib)
500mV@50mA,5mA
工作温度
-55℃~+150℃@(Tj)
Shop:
1001
Settle
Cooperation
QTY[pcs]
Price[CNY/pcs]
50+
0.0626
500+
0.0611
2000+
0.0602
5000+
0.0592
QTY(Multiplicity:50):
Stock:
1,000
Mpq:
1000 (袋)
Delivery:
2-5 Business Day
Total:
3.13

C006623596 2N5551 C is designed and produced by HL(豪林), and is available for sale in the Discrete Semiconductor-Transistor-Bipolar Transistor (triode) of Yuanjingcheng Supply Chain Co., Ltd. https://www.szyjc.com, and can be purchased and ordered through the original manufacturer/agent and other formal channels. C006623596 2N5551 C reference price ¥0.0626,real-time inventory 1000. TO-92-3 晶体管类型: NPN, 集电极电流(Ic): 600mA, 集射极击穿电压(Vceo): 160V, 功率(Pd): 625mW, 直流电流增益(hFE@Ic,Vce): 150@10mA,5V, 特征频率(fT): 80MHz, 集电极截止电流(Icbo): 100nA, 集电极-发射极饱和电压(VCE(sat)@Ic,Ib): 500mV@50mA,5mA, 工作温度: -55℃~+150℃@(Tj). You can download the Chinese information, pin diagram, datasheet data manual function manual of 2N5551 C, and check the real-time inventory, price, and delivery date. In special cases, you can make inquiries for quotations, one-click purchases of bom, and selection substitutions. The platform provides data API docking, real-time inventory VMI services, and online EDI transactions.

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