STQ2HNK60ZR-AP

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产商:	ST(意法半导体)
型号:	STQ2HNK60ZR-AP
编号:	C006625630
封装:	TO-92
海关编码:	-
参数描述:	1个N沟道 耐压:600V 电流:500mA
数据手册:	数据手册

规格

Category

MOSFET

类型

1个N沟道

漏源电压(Vdss)

600V

连续漏极电流(Id)

500mA

功率(Pd)

3W

导通电阻(RDS(on)@Vgs,Id)

4.8Ω@1A,10V

阈值电压(Vgs(th)@Id)

4.5V@50uA

栅极电荷(Qg@Vgs)

15nC@10V

输入电容(Ciss@Vds)

280pF@25V

工作温度

-55℃~+150℃@(Tj)

店铺:

1001

入驻

合作库存

数量[pcs]

单价[CNY/pcs]

1+

2.45

10+

2.17

30+

2.02

100+

1.88

500+

1.8

1000+

1.75

数量(递增量:1):

库存:

2,000

+-

加入购物车

询价

最小包装量:

2000 (盒)

交付周期:

2-5 工作日

共:

￥2.45

C006625630 STQ2HNK60ZR-AP is designed and produced by ST(意法半导体), and is available for sale in the Discrete Semiconductor-Transistor-MOSFET of Yuanjingcheng Supply Chain Co., Ltd. https://www.szyjc.com, and can be purchased and ordered through the original manufacturer/agent and other formal channels. C006625630 STQ2HNK60ZR-AP reference price ￥2.45，real-time inventory 2000. TO-92 类型: 1个N沟道, 漏源电压(Vdss): 600V, 连续漏极电流(Id): 500mA, 功率(Pd): 3W, 导通电阻(RDS(on)@Vgs,Id): 4.8Ω@1A,10V, 阈值电压(Vgs(th)@Id): 4.5V@50uA, 栅极电荷(Qg@Vgs): 15nC@10V, 输入电容(Ciss@Vds): 280pF@25V, 工作温度: -55℃~+150℃@(Tj). You can download the Chinese information, pin diagram, datasheet data manual function manual of STQ2HNK60ZR-AP, and check the real-time inventory, price, and delivery date. In special cases, you can make inquiries for quotations, one-click purchases of bom, and selection substitutions. The platform provides data API docking, real-time inventory VMI services, and online EDI transactions.