STB7NK80ZT4

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Mfr.:	ST(意法半导体)
Mfr. Part #:	STB7NK80ZT4
YJC. No:	C006630057
Package:	D2PAK
ECCN:	-
Description:	1个N沟道 耐压:800V 电流:5.2A
Datasheet:	Datasheet

SPECIFICATION

Category

MOSFET

类型

1个N沟道

漏源电压(Vdss)

800V

连续漏极电流(Id)

5.2A

功率(Pd)

125W

导通电阻(RDS(on)@Vgs,Id)

1.8Ω@10V,2.6A

阈值电压(Vgs(th)@Id)

4.5V@100uA

栅极电荷(Qg@Vgs)

56nC@10V

输入电容(Ciss@Vds)

1.138nF@25V

工作温度

-55℃~+150℃@(Tj)

Shop:

1001

Settle

Cooperation

QTY[pcs]

Price[CNY/pcs]

1+

9.71

10+

8.27

30+

7.49

100+

6.6

500+

6.2

1000+

6.02

QTY(Multiplicity:1000):

Stock:

25,000

+-

Add To Cart

Quota

Mpq:

1000 (圆盘)

Delivery:

2-5 Business Day

Total:

￥6,020.00

C006630057 STB7NK80ZT4 is designed and produced by ST(意法半导体), and is available for sale in the Discrete Semiconductor-Transistor-MOSFET of Yuanjingcheng Supply Chain Co., Ltd. https://www.szyjc.com, and can be purchased and ordered through the original manufacturer/agent and other formal channels. C006630057 STB7NK80ZT4 reference price ￥9.71，real-time inventory 25000. D2PAK 类型: 1个N沟道, 漏源电压(Vdss): 800V, 连续漏极电流(Id): 5.2A, 功率(Pd): 125W, 导通电阻(RDS(on)@Vgs,Id): 1.8Ω@10V,2.6A, 阈值电压(Vgs(th)@Id): 4.5V@100uA, 栅极电荷(Qg@Vgs): 56nC@10V, 输入电容(Ciss@Vds): 1.138nF@25V, 工作温度: -55℃~+150℃@(Tj). You can download the Chinese information, pin diagram, datasheet data manual function manual of STB7NK80ZT4, and check the real-time inventory, price, and delivery date. In special cases, you can make inquiries for quotations, one-click purchases of bom, and selection substitutions. The platform provides data API docking, real-time inventory VMI services, and online EDI transactions.