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HE8550G-D-AE3-R

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产品图片仅供参考,可能与产品实物不同,但不会改变其基本特征。
产商:UTC(友顺)
型号:
编号:
封装:SOT-23
海关编码:-
参数描述:PNP 电流:1.5A 耐压:25V
数据手册:
规格
Category
Bipolar Transistor (triode)
晶体管类型
PNP
集电极电流(Ic)
1.5A
集射极击穿电压(Vceo)
25V
功率(Pd)
350mW
直流电流增益(hFE@Ic,Vce)
160@100mA,1V
特征频率(fT)
190MHz
集电极截止电流(Icbo)
100nA
集电极-发射极饱和电压(VCE(sat)@Ic,Ib)
280mV@800mA,80mA
店铺:
1001
入驻
合作库存
数量[pcs]
单价[CNY/pcs]
20+
0.1625
200+
0.1319
600+
0.1149
3000+
0.1001
9000+
0.0912
21000+
0.0865
数量(递增量:20):
库存:
120
最小包装量:
3000 (圆盘)
交付周期:
2-5 工作日
共:
3.25

C006812994 HE8550G-D-AE3-R is designed and produced by UTC(友顺), and is available for sale in the Discrete Semiconductor-Transistor-Bipolar Transistor (triode) of Yuanjingcheng Supply Chain Co., Ltd. https://www.szyjc.com, and can be purchased and ordered through the original manufacturer/agent and other formal channels. C006812994 HE8550G-D-AE3-R reference price ¥0.1625,real-time inventory 120. SOT-23 晶体管类型: PNP, 集电极电流(Ic): 1.5A, 集射极击穿电压(Vceo): 25V, 功率(Pd): 350mW, 直流电流增益(hFE@Ic,Vce): 160@100mA,1V, 特征频率(fT): 190MHz, 集电极截止电流(Icbo): 100nA, 集电极-发射极饱和电压(VCE(sat)@Ic,Ib): 280mV@800mA,80mA. You can download the Chinese information, pin diagram, datasheet data manual function manual of HE8550G-D-AE3-R, and check the real-time inventory, price, and delivery date. In special cases, you can make inquiries for quotations, one-click purchases of bom, and selection substitutions. The platform provides data API docking, real-time inventory VMI services, and online EDI transactions.

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