SI4866BDY-T1-E3

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Mfr.:	Vishay(威世)
Mfr. Part #:	SI4866BDY-T1-E3
YJC. No:	C006981218
Package:	SOIC-8
ECCN:	-
Description:	1个N沟道 耐压:12V 电流:21.5A 停产
Datasheet:	Datasheet

SPECIFICATION

Category

MOSFET

类型

1个N沟道

漏源电压(Vdss)

12V

连续漏极电流(Id)

21.5A

导通电阻(RDS(on)@Vgs,Id)

5.3mΩ@4.5V,12A

功率(Pd)

4.45W

阈值电压(Vgs(th)@Id)

1V@250uA

Shop:

1001

Settle

Cooperation

QTY[pcs]

Price[CNY/pcs]

1+

12.72

10+

12.46

30+

12.28

100+

12.11

QTY(Multiplicity:1):

Stock:

0

+-

Reserve

Quota

Mpq:

2500 (圆盘)

Delivery:

28-35 Business Day

Total:

￥12.72

C006981218 SI4866BDY-T1-E3 is designed and produced by Vishay(威世), and is available for sale in the Discrete Semiconductor-Transistor-MOSFET of Yuanjingcheng Supply Chain Co., Ltd. https://www.szyjc.com, and can be purchased and ordered through the original manufacturer/agent and other formal channels. C006981218 SI4866BDY-T1-E3 reference price ￥12.72，real-time inventory 0. SOIC-8 类型: 1个N沟道, 漏源电压(Vdss): 12V, 连续漏极电流(Id): 21.5A, 导通电阻(RDS(on)@Vgs,Id): 5.3mΩ@4.5V,12A, 功率(Pd): 4.45W, 阈值电压(Vgs(th)@Id): 1V@250uA. You can download the Chinese information, pin diagram, datasheet data manual function manual of SI4866BDY-T1-E3, and check the real-time inventory, price, and delivery date. In special cases, you can make inquiries for quotations, one-click purchases of bom, and selection substitutions. The platform provides data API docking, real-time inventory VMI services, and online EDI transactions.