HE8550G-D-AB3-R

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Mfr.:	UTC(友顺)
Mfr. Part #:	HE8550G-D-AB3-R
YJC. No:	C006988151
Package:	SOT-89-3
ECCN:	-
Description:	PNP 电流:1.5A 耐压:25V
Datasheet:	Datasheet

SPECIFICATION

Category

Bipolar Transistor (triode)

晶体管类型

PNP

集电极电流(Ic)

1.5A

集射极击穿电压(Vceo)

25V

功率(Pd)

500mW

直流电流增益(hFE@Ic,Vce)

160@100mA,1V

特征频率(fT)

190MHz

集电极截止电流(Icbo)

100nA

集电极-发射极饱和电压(VCE(sat)@Ic,Ib)

280mV@800mA,80mA

Shop:

1001

Settle

Cooperation

QTY[pcs]

Price[CNY/pcs]

4000+

0.210974

5000+

0.201802

QTY(Multiplicity:1):

Stock:

92,090

+-

Add To Cart

Quota

Mpq:

4000 (圆盘)

Delivery:

2-5 Business Day

Total:

￥Infinity

C006988151 HE8550G-D-AB3-R is designed and produced by UTC(友顺), and is available for sale in the Discrete Semiconductor-Transistor-Bipolar Transistor (triode) of Yuanjingcheng Supply Chain Co., Ltd. https://www.szyjc.com, and can be purchased and ordered through the original manufacturer/agent and other formal channels. C006988151 HE8550G-D-AB3-R reference price ￥0.210974，real-time inventory 92090. SOT-89-3 晶体管类型: PNP, 集电极电流(Ic): 1.5A, 集射极击穿电压(Vceo): 25V, 功率(Pd): 500mW, 直流电流增益(hFE@Ic,Vce): 160@100mA,1V, 特征频率(fT): 190MHz, 集电极截止电流(Icbo): 100nA, 集电极-发射极饱和电压(VCE(sat)@Ic,Ib): 280mV@800mA,80mA. You can download the Chinese information, pin diagram, datasheet data manual function manual of HE8550G-D-AB3-R, and check the real-time inventory, price, and delivery date. In special cases, you can make inquiries for quotations, one-click purchases of bom, and selection substitutions. The platform provides data API docking, real-time inventory VMI services, and online EDI transactions.