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CS1N60A1H

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Mfr.:Crhj(华晶)
Mfr. Part #:
YJC. No:
Package:TO-92-3
ECCN:-
Description:1个N沟道 耐压:600V 电流:800mA
Datasheet:
SPECIFICATION
Category
MOSFET
类型
1个N沟道
漏源电压(Vdss)
600V
连续漏极电流(Id)
800mA
导通电阻(RDS(on)@Vgs,Id)
15Ω@10V,400mA
功率(Pd)
3W
阈值电压(Vgs(th)@Id)
4V@250uA
Shop:
1001
Settle
Cooperation
QTY[pcs]
Price[CNY/pcs]
5+
0.5616
50+
0.4536
150+
0.3996
500+
0.3591
2000+
0.3267
4000+
0.3105
QTY(Multiplicity:5):
Stock:
0
Mpq:
2000 (盒)
Delivery:
28-35 Business Day
Total:
2.81

C007083764 CS1N60A1H is designed and produced by Crhj(华晶), and is available for sale in the Discrete Semiconductor-Transistor-MOSFET of Yuanjingcheng Supply Chain Co., Ltd. https://www.szyjc.com, and can be purchased and ordered through the original manufacturer/agent and other formal channels. C007083764 CS1N60A1H reference price ¥0.5616,real-time inventory 0. TO-92-3 类型: 1个N沟道, 漏源电压(Vdss): 600V, 连续漏极电流(Id): 800mA, 导通电阻(RDS(on)@Vgs,Id): 15Ω@10V,400mA, 功率(Pd): 3W, 阈值电压(Vgs(th)@Id): 4V@250uA. You can download the Chinese information, pin diagram, datasheet data manual function manual of CS1N60A1H, and check the real-time inventory, price, and delivery date. In special cases, you can make inquiries for quotations, one-click purchases of bom, and selection substitutions. The platform provides data API docking, real-time inventory VMI services, and online EDI transactions.

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