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1N60L-TM3-T

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Mfr.:UTC(友顺)
Mfr. Part #:
YJC. No:
Package:TO-251(IPAK)
ECCN:-
Description:1个N沟道 耐压:600V 电流:1.2A
Datasheet:
SPECIFICATION
Category
MOSFET
类型
1个N沟道
漏源电压(Vdss)
600V
连续漏极电流(Id)
1.2A
导通电阻(RDS(on)@Vgs,Id)
11.5Ω@10V,600mA
功率(Pd)
28W
阈值电压(Vgs(th)@Id)
4V@250uA
Shop:
1001
Settle
Cooperation
QTY[pcs]
Price[CNY/pcs]
1+
1.0884
10+
0.8952
30+
0.8124
100+
0.709
500+
0.663
1000+
0.6354
QTY(Multiplicity:1):
Stock:
0
Mpq:
80 (管)
Delivery:
28-35 Business Day
Total:
1.09

C007122036 1N60L-TM3-T is designed and produced by UTC(友顺), and is available for sale in the Discrete Semiconductor-Transistor-MOSFET of Yuanjingcheng Supply Chain Co., Ltd. https://www.szyjc.com, and can be purchased and ordered through the original manufacturer/agent and other formal channels. C007122036 1N60L-TM3-T reference price ¥1.0884,real-time inventory 0. TO-251(IPAK) 类型: 1个N沟道, 漏源电压(Vdss): 600V, 连续漏极电流(Id): 1.2A, 导通电阻(RDS(on)@Vgs,Id): 11.5Ω@10V,600mA, 功率(Pd): 28W, 阈值电压(Vgs(th)@Id): 4V@250uA. You can download the Chinese information, pin diagram, datasheet data manual function manual of 1N60L-TM3-T, and check the real-time inventory, price, and delivery date. In special cases, you can make inquiries for quotations, one-click purchases of bom, and selection substitutions. The platform provides data API docking, real-time inventory VMI services, and online EDI transactions.

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