CMLT3906EG TR PBFREE

产品图片仅供参考，可能与产品实物不同，但不会改变其基本特征。

产商:	Central(中央半导体)
型号:	CMLT3906EG TR PBFREE
编号:	C007235479
封装:	SOT-563
海关编码:	-
参数描述:	PNP 电流:200mA 耐压:40V
数据手册:	数据手册

规格

Category

Bipolar Transistor (triode)

晶体管类型

PNP

集电极电流(Ic)

200mA

集射极击穿电压(Vceo)

40V

功率(Pd)

150mW

直流电流增益(hFE@Ic,Vce)

150@10mA,1V

特征频率(fT)

300MHz

集电极-发射极饱和电压(VCE(sat)@Ic,Ib)

200mV@5mA,50mA

工作温度

-65℃~+150℃@(Tj)

店铺:

1001

入驻

合作库存

数量[pcs]

单价[CNY/pcs]

1+

4.25

200+

1.7

500+

1.64

1000+

1.61

数量(递增量:1):

库存:

0

+-

订货

询价

最小包装量:

3000 (圆盘)

交付周期:

28-35 工作日

共:

￥4.25

C007235479 CMLT3906EG TR PBFREE is designed and produced by Central(中央半导体), and is available for sale in the Discrete Semiconductor-Transistor-Bipolar Transistor (triode) of Yuanjingcheng Supply Chain Co., Ltd. https://www.szyjc.com, and can be purchased and ordered through the original manufacturer/agent and other formal channels. C007235479 CMLT3906EG TR PBFREE reference price ￥4.25，real-time inventory 0. SOT-563 晶体管类型: PNP, 集电极电流(Ic): 200mA, 集射极击穿电压(Vceo): 40V, 功率(Pd): 150mW, 直流电流增益(hFE@Ic,Vce): 150@10mA,1V, 特征频率(fT): 300MHz, 集电极-发射极饱和电压(VCE(sat)@Ic,Ib): 200mV@5mA,50mA, 工作温度: -65℃~+150℃@(Tj). You can download the Chinese information, pin diagram, datasheet data manual function manual of CMLT3906EG TR PBFREE, and check the real-time inventory, price, and delivery date. In special cases, you can make inquiries for quotations, one-click purchases of bom, and selection substitutions. The platform provides data API docking, real-time inventory VMI services, and online EDI transactions.