C009274142 SE30P12D is designed and produced by SINO-IC(光宇睿芯), and is available for sale in the Discrete Semiconductor Transistor MOSFET of Yuanjingcheng Supply Chain Co., Ltd. https://www.szyjc.com. The package is DFN-8(3x3), and can be purchased and ordered through the original manufacturer/agent and other formal channels. SZYJC can view real-time inventory, tiered prices, and delivery delivery dates.

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SE30P12D

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Mfr.:	SINO-IC(光宇睿芯)
Mfr. Part #:
YJC. No:
Package:	DFN-8(3x3)
ECCN:	-
Description:	1个P沟道耐压:30V 电流:12A
Datasheet:

SPECIFICATION

Category

MOSFET

类型

1个P沟道

漏源电压(Vdss)

30V

连续漏极电流(Id)

12A

导通电阻(RDS(on)@Vgs,Id)

15mΩ@10V,10A

功率(Pd)

阈值电压(Vgs(th)@Id)

3V@250uA

Shop:

1001

Settle

Cooperation

QTY[pcs]

Price[CNY/pcs]

0.9201

50+

0.7311

150+

0.6501

500+

0.549

2500+

0.504

5000+

0.477

QTY(Multiplicity:5):

Stock:

749

Mpq:

5000 (圆盘)

Delivery:

2-5 Business Day

Total:

￥4.61

C009274142 SE30P12D is designed and produced by SINO-IC(光宇睿芯), and is available for sale in the Discrete Semiconductor-Transistor-MOSFET of Yuanjingcheng Supply Chain Co., Ltd. https://www.szyjc.com, and can be purchased and ordered through the original manufacturer/agent and other formal channels. C009274142 SE30P12D reference price ￥0.9201，real-time inventory 749. DFN-8(3x3) 类型: 1个P沟道, 漏源电压(Vdss): 30V, 连续漏极电流(Id): 12A, 导通电阻(RDS(on)@Vgs,Id): 15mΩ@10V,10A, 功率(Pd): 2W, 阈值电压(Vgs(th)@Id): 3V@250uA. You can download the Chinese information, pin diagram, datasheet data manual function manual of SE30P12D, and check the real-time inventory, price, and delivery date. In special cases, you can make inquiries for quotations, one-click purchases of bom, and selection substitutions. The platform provides data API docking, real-time inventory VMI services, and online EDI transactions.

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