MMBT5551

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Mfr.:	HT(金誉)
Mfr. Part #:	MMBT5551
YJC. No:	C009275529
Package:	SOT-23
ECCN:	-
Description:	NPN 电流:600mA 耐压:160V 100-200
Datasheet:	Datasheet

SPECIFICATION

Category

Bipolar Transistor (triode)

晶体管类型

NPN

集电极电流(Ic)

600mA

集射极击穿电压(Vceo)

160V

功率(Pd)

300mW

直流电流增益(hFE@Ic,Vce)

200@10mA,5V

特征频率(fT)

100MHz

集电极截止电流(Icbo)

50nA

集电极-发射极饱和电压(VCE(sat)@Ic,Ib)

200mV@50mA,5mA

Shop:

1001

Settle

Cooperation

QTY[pcs]

Price[CNY/pcs]

50+

0.0656

500+

0.0641

3000+

0.0632

6000+

0.0622

6100+

0.0622

6200+

0.0622

QTY(Multiplicity:50):

Stock:

0

+-

Reserve

Quota

Mpq:

3000 (圆盘)

Delivery:

28-35 Business Day

Total:

￥3.28

C009275529 MMBT5551 is designed and produced by HT(金誉), and is available for sale in the Discrete Semiconductor-Transistor-Bipolar Transistor (triode) of Yuanjingcheng Supply Chain Co., Ltd. https://www.szyjc.com, and can be purchased and ordered through the original manufacturer/agent and other formal channels. C009275529 MMBT5551 reference price ￥0.0656，real-time inventory 0. SOT-23 晶体管类型: NPN, 集电极电流(Ic): 600mA, 集射极击穿电压(Vceo): 160V, 功率(Pd): 300mW, 直流电流增益(hFE@Ic,Vce): 200@10mA,5V, 特征频率(fT): 100MHz, 集电极截止电流(Icbo): 50nA, 集电极-发射极饱和电压(VCE(sat)@Ic,Ib): 200mV@50mA,5mA. You can download the Chinese information, pin diagram, datasheet data manual function manual of MMBT5551, and check the real-time inventory, price, and delivery date. In special cases, you can make inquiries for quotations, one-click purchases of bom, and selection substitutions. The platform provides data API docking, real-time inventory VMI services, and online EDI transactions.