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CID18N65D

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产品图片仅供参考,可能与产品实物不同,但不会改变其基本特征。
产商:Tokmas(托克马斯)
型号:
编号:
封装:DFN-8(8x8)
海关编码:-
参数描述:氮化镓MOS
数据手册:
规格
Category
Other transistors
沟道类型
1个N沟道
Vds-漏源击穿电压
650V
Id-漏极电流(25℃)
17A
Pd-功耗
113W
Vgs(th)-阈值电压
1.7V
RDS(on)-导通电阻(10V)
100mΩ;100mΩ
Qg-栅极电荷
3.3nC
Ciss-输入电容
125pF
Crss-反向传输电容
0.5pF
工作温度
-55℃~+150℃
店铺:
1001
入驻
合作库存
数量[pcs]
单价[CNY/pcs]
1+
10.03
10+
8.65
30+
7.79
100+
6.9
500+
6.5
1000+
6.33
数量(递增量:1):
库存:
1,059
最小包装量:
2500 (圆盘)
交付周期:
2-5 工作日
共:
10.03

C009303177 CID18N65D is designed and produced by Tokmas(托克马斯), and is available for sale in the Discrete Semiconductor-Transistor-Other transistors of Yuanjingcheng Supply Chain Co., Ltd. https://www.szyjc.com, and can be purchased and ordered through the original manufacturer/agent and other formal channels. C009303177 CID18N65D reference price ¥10.03,real-time inventory 1059. DFN-8(8x8) 沟道类型: 1个N沟道, Vds-漏源击穿电压: 650V, Id-漏极电流(25℃): 17A, Pd-功耗: 113W, Vgs(th)-阈值电压: 1.7V, RDS(on)-导通电阻(10V): 100mΩ;100mΩ, Qg-栅极电荷: 3.3nC, Ciss-输入电容: 125pF, Crss-反向传输电容: 0.5pF, 工作温度: -55℃~+150℃. You can download the Chinese information, pin diagram, datasheet data manual function manual of CID18N65D, and check the real-time inventory, price, and delivery date. In special cases, you can make inquiries for quotations, one-click purchases of bom, and selection substitutions. The platform provides data API docking, real-time inventory VMI services, and online EDI transactions.

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