MSJP11N65A-BP

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Mfr.:	MCC(美微科)
Mfr. Part #:	MSJP11N65A-BP
YJC. No:	C009740554
Package:	TO-220AB
ECCN:	-
Description:	1个N沟道 耐压:650V 电流:11A
Datasheet:	Datasheet

SPECIFICATION

Category

MOSFET

类型

1个N沟道

漏源电压(Vdss)

650V

连续漏极电流(Id)

11A

导通电阻(RDS(on)@Vgs,Id)

380mΩ@3.2A,10V

功率(Pd)

83.3W

阈值电压(Vgs(th)@Id)

4V@250uA

栅极电荷(Qg@Vgs)

21nC@10V

输入电容(Ciss@Vds)

763pF@25V

工作温度

-55℃~+150℃@(Tj)

Shop:

1001

Settle

Cooperation

QTY[pcs]

Price[CNY/pcs]

1+

6.44

200+

2.5

500+

2.41

1000+

2.37

QTY(Multiplicity:1):

Stock:

0

+-

Reserve

Quota

Mpq:

1000 (管)

Delivery:

28-35 Business Day

Total:

￥6.44

C009740554 MSJP11N65A-BP is designed and produced by MCC(美微科), and is available for sale in the Discrete Semiconductor-Transistor-MOSFET of Yuanjingcheng Supply Chain Co., Ltd. https://www.szyjc.com, and can be purchased and ordered through the original manufacturer/agent and other formal channels. C009740554 MSJP11N65A-BP reference price ￥6.44，real-time inventory 0. TO-220AB 类型: 1个N沟道, 漏源电压(Vdss): 650V, 连续漏极电流(Id): 11A, 导通电阻(RDS(on)@Vgs,Id): 380mΩ@3.2A,10V, 功率(Pd): 83.3W, 阈值电压(Vgs(th)@Id): 4V@250uA, 栅极电荷(Qg@Vgs): 21nC@10V, 输入电容(Ciss@Vds): 763pF@25V, 工作温度: -55℃~+150℃@(Tj). You can download the Chinese information, pin diagram, datasheet data manual function manual of MSJP11N65A-BP, and check the real-time inventory, price, and delivery date. In special cases, you can make inquiries for quotations, one-click purchases of bom, and selection substitutions. The platform provides data API docking, real-time inventory VMI services, and online EDI transactions.