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CMLDM8120G TR PBFREE

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Mfr.:Central(中央半导体)
Mfr. Part #:
YJC. No:
Package:SOT-563
ECCN:-
Description:1个P沟道 耐压:20V 电流:860mA
Datasheet:
Datasheet
SPECIFICATION
Category
MOSFET
类型
1个P沟道
漏源电压(Vdss)
20V
连续漏极电流(Id)
860mA
导通电阻(RDS(on)@Vgs,Id)
150mΩ@950mA,4.5V
功率(Pd)
350mW
阈值电压(Vgs(th)@Id)
1V@250uA
栅极电荷(Qg@Vgs)
3.56nC@4.5V
输入电容(Ciss@Vds)
200pF@16V
工作温度
-65℃~+150℃@(Tj)
Shop:
1001
Settle
Cooperation
QTY[pcs]
Price[CNY/pcs]
5+
0.9876
50+
0.7986
150+
0.7176
500+
0.5895
3000+
0.5445
6000+
0.517499
QTY(Multiplicity:5):
Stock:
0
Mpq:
3000 (圆盘)
Delivery:
28-35 Business Day
Total:
4.94
C010678543 CMLDM8120G TR PBFREE is designed and produced by Central(中央半导体), and is available for sale in the Discrete Semiconductor-Transistor-MOSFET of Yuanjingcheng Supply Chain Co., Ltd. https://www.szyjc.com, and can be purchased and ordered through the original manufacturer/agent and other formal channels. C010678543 CMLDM8120G TR PBFREE reference price ¥0.9876,real-time inventory 0. SOT-563 类型: 1个P沟道, 漏源电压(Vdss): 20V, 连续漏极电流(Id): 860mA, 导通电阻(RDS(on)@Vgs,Id): 150mΩ@950mA,4.5V, 功率(Pd): 350mW, 阈值电压(Vgs(th)@Id): 1V@250uA, 栅极电荷(Qg@Vgs): 3.56nC@4.5V, 输入电容(Ciss@Vds): 200pF@16V, 工作温度: -65℃~+150℃@(Tj). You can download the Chinese information, pin diagram, datasheet data manual function manual of CMLDM8120G TR PBFREE, and check the real-time inventory, price, and delivery date. In special cases, you can make inquiries for quotations, one-click purchases of bom, and selection substitutions. The platform provides data API docking, real-time inventory VMI services, and online EDI transactions.
Datasheet
RFQ
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