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SMMBT5088LT1G

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Mfr.:ON(安森美)
Mfr. Part #:
YJC. No:
Package:SOT-23-3
ECCN:-
Description:耐压:30V 电流:50mA NPN
Datasheet:
SPECIFICATION
Category
Bipolar Transistor (triode)
晶体管类型
NPN
集电极电流(Ic)
50mA
集射极击穿电压(Vceo)
30V
功率(Pd)
300mW
直流电流增益(hFE@Ic,Vce)
300@100uA,5V
特征频率(fT)
50MHz
集电极截止电流(Icbo)
50nA
集电极-发射极饱和电压(VCE(sat)@Ic,Ib)
500mV@1mA,10mA
工作温度
-55℃~+150℃@(Tj)
Shop:
1001
Settle
Cooperation
QTY[pcs]
Price[CNY/pcs]
1+
3.9
200+
1.51
500+
1.46
1000+
1.43
QTY(Multiplicity:1):
Stock:
0
Mpq:
3000 (圆盘)
Delivery:
28-35 Business Day
Total:
3.90

C011792417 SMMBT5088LT1G is designed and produced by ON(安森美), and is available for sale in the Discrete Semiconductor-Transistor-Bipolar Transistor (triode) of Yuanjingcheng Supply Chain Co., Ltd. https://www.szyjc.com, and can be purchased and ordered through the original manufacturer/agent and other formal channels. C011792417 SMMBT5088LT1G reference price ¥3.9,real-time inventory 0. SOT-23-3 晶体管类型: NPN, 集电极电流(Ic): 50mA, 集射极击穿电压(Vceo): 30V, 功率(Pd): 300mW, 直流电流增益(hFE@Ic,Vce): 300@100uA,5V, 特征频率(fT): 50MHz, 集电极截止电流(Icbo): 50nA, 集电极-发射极饱和电压(VCE(sat)@Ic,Ib): 500mV@1mA,10mA, 工作温度: -55℃~+150℃@(Tj). You can download the Chinese information, pin diagram, datasheet data manual function manual of SMMBT5088LT1G, and check the real-time inventory, price, and delivery date. In special cases, you can make inquiries for quotations, one-click purchases of bom, and selection substitutions. The platform provides data API docking, real-time inventory VMI services, and online EDI transactions.

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