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2SD1060R-1E

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产品图片仅供参考,可能与产品实物不同,但不会改变其基本特征。
产商:ON(安森美)
型号:
编号:
封装:TO-220
海关编码:-
参数描述:NPN 电流:5A 耐压:50V
数据手册:
规格
Category
Bipolar Transistor (triode)
晶体管类型
NPN
集电极电流(Ic)
5A
集射极击穿电压(Vceo)
50V
功率(Pd)
30W
直流电流增益(hFE@Ic,Vce)
100@1A,2V
特征频率(fT)
30MHz
集电极截止电流(Icbo)
100nA
集电极-发射极饱和电压(VCE(sat)@Ic,Ib)
300mV@3A,300mA
店铺:
1001
入驻
合作库存
数量[pcs]
单价[CNY/pcs]
1+
9.78
200+
3.79
500+
3.65
1000+
3.59
数量(递增量:1):
库存:
0
最小包装量:
50 (管)
交付周期:
28-35 工作日
共:
9.78

C011798944 2SD1060R-1E is designed and produced by ON(安森美), and is available for sale in the Discrete Semiconductor-Transistor-Bipolar Transistor (triode) of Yuanjingcheng Supply Chain Co., Ltd. https://www.szyjc.com, and can be purchased and ordered through the original manufacturer/agent and other formal channels. C011798944 2SD1060R-1E reference price ¥9.78,real-time inventory 0. TO-220 晶体管类型: NPN, 集电极电流(Ic): 5A, 集射极击穿电压(Vceo): 50V, 功率(Pd): 30W, 直流电流增益(hFE@Ic,Vce): 100@1A,2V, 特征频率(fT): 30MHz, 集电极截止电流(Icbo): 100nA, 集电极-发射极饱和电压(VCE(sat)@Ic,Ib): 300mV@3A,300mA. You can download the Chinese information, pin diagram, datasheet data manual function manual of 2SD1060R-1E, and check the real-time inventory, price, and delivery date. In special cases, you can make inquiries for quotations, one-click purchases of bom, and selection substitutions. The platform provides data API docking, real-time inventory VMI services, and online EDI transactions.

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