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STW65N80K5

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Mfr.:ST(意法半导体)
Mfr. Part #:
YJC. No:
Package:TO-247-3
ECCN:EAR99
Description:
Datasheet:
Datasheet
SPECIFICATION
Category
MOSFET
Package
TO-247-3
Transistor polarity
MOSFET
Pd-Power Dissipation
446W
VGS
30V
VDS
800V
Continuous drain current
46A
Operating Temperature Range
150℃~-55℃
Termination type
Through Hole
Rds On
0.08Ω
Qg
92 nC
Circuit Branch Number
1Channel
类型
1个N沟道
漏源电压(Vdss)
800V
连续漏极电流(Id)
46A
功率(Pd)
446W
导通电阻(RDS(on)@Vgs,Id)
70mΩ@10V,23A
阈值电压(Vgs(th)@Id)
5V@100uA
栅极电荷(Qg@Vgs)
92nC@10V
输入电容(Ciss@Vds)
3.23nF@100V
反向传输电容(Crss@Vds)
3pF@100V
工作温度
-55℃~+150℃@(Tj)
Shop:
1001
Settle
Cooperation
QTY[pcs]
Price[CNY/pcs]
1+
169.40758
10+
169.31403
25+
137.22855
50+
136.57375
100+
128.52899
250+
117.21021
QTY(Multiplicity:1):
Stock:
7,800
Mpq:
600
Delivery:
18-20 Business Day
Total:
169.41
C000018408 STW65N80K5 由 ST(意法半导体) 设计生产,在 https://www.szyjc.com 沅竞成供应链有限公司 分立半导体-晶体管-MOSFET 里有现货销售,并且可以通过 原厂/代理 及其他正规渠道进行采购订货。C000018408 STW65N80K5 参考价格 ¥169.4076,实时库存 7800。TO-247-3 Package: TO-247-3, Transistor polarity: MOSFET, Pd-Power Dissipation: 446W, VGS: 30V, VDS: 800V, Continuous drain current: 46A, Operating Temperature Range: 150℃~-55℃, Termination type: Through Hole, Rds On: 0.08Ω, Qg: 92 nC, Circuit Branch Number: 1Channel, 类型: 1个N沟道, 漏源电压(Vdss): 800V, 连续漏极电流(Id): 46A, 功率(Pd): 446W, 导通电阻(RDS(on)@Vgs,Id): 70mΩ@10V,23A, 阈值电压(Vgs(th)@Id): 5V@100uA, 栅极电荷(Qg@Vgs): 92nC@10V, 输入电容(Ciss@Vds): 3.23nF@100V, 反向传输电容(Crss@Vds): 3pF@100V, 工作温度: -55℃~+150℃@(Tj)。你可以下载 STW65N80K5 中文资料、引脚图、Datasheet数据手册功能说明书,并查看实时库存、价格、交期,特殊情况可做询报价、bom一键采购和选型替代。平台提供数据API对接,实时库存VMI服务和在线EDI交易。
Datasheet
RFQ
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