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Mfr.: | ON(安森美) |
Mfr. Part #: | |
YJC. No: | |
Package: | TO-252-2(DPAK) |
ECCN: | EAR99 |
Description: | PNP,Vceo=350V,Ic=1A |
Datasheet: | |
SPECIFICATION
Circuit Branch Number
Single
Operating Temperature Range
-55℃~150℃
Collector-emitter voltage
350V
Pd-Power Dissipation
1.56W
直流电流增益(hFE@Ic,Vce)
30@300mA,10V
集电极-发射极饱和电压(VCE(sat)@Ic,Ib)
1V@1A,200mA
Delivery:
14-16 Business Day
C000107288 MJD5731T4G 由 ON(安森美) 设计生产,在 https://www.szyjc.com 沅竞成供应链有限公司 分立半导体-晶体管-双极晶体管(三极管) 里有现货销售,并且可以通过 原厂/代理 及其他正规渠道进行采购订货。C000107288 MJD5731T4G 参考价格 ¥6.4143,实时库存 242800。TO-252-2(DPAK) Transistor polarity: PNP, Circuit Branch Number: Single, Collector Current Ic: 1A, Package: TO-252-2(DPAK), Height: 2.38 mm, Operating Temperature Range: -55℃~150℃, Collector-emitter voltage: 350V, Width: 6.22 mm, Length: 6.73 mm, Termination type: SMD/SMT, Pd-Power Dissipation: 1.56W, 晶体管类型: PNP, 集电极电流(Ic): 1A, 集射极击穿电压(Vceo): 350V, 功率(Pd): 1.56W, 直流电流增益(hFE@Ic,Vce): 30@300mA,10V, 特征频率(fT): 10MHz, 集电极截止电流(Icbo): 100uA, 集电极-发射极饱和电压(VCE(sat)@Ic,Ib): 1V@1A,200mA, 工作温度: -55℃~+150℃@(Tj)。你可以下载 MJD5731T4G 中文资料、引脚图、Datasheet数据手册功能说明书,并查看实时库存、价格、交期,特殊情况可做询报价、bom一键采购和选型替代。平台提供数据API对接,实时库存VMI服务和在线EDI交易。