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IXFH150N17T2

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Mfr.:IXYS(艾赛斯)
Mfr. Part #:
YJC. No:
Package:TO-247-3
ECCN:EAR99
Description:
Datasheet:
Datasheet
SPECIFICATION
Category
MOSFET
Qg
233 nC
VGS
10V
Package
TO-247-3
Transistor polarity
MOSFET
Operating Temperature Range
-55℃~175℃
VDS
175V
Termination type
Through Hole
Rds On
0.012Ω
Circuit Branch Number
1Channel
Continuous drain current
150A
Pd-Power Dissipation
880W
类型
1个N沟道
漏源电压(Vdss)
175V
连续漏极电流(Id)
150A
导通电阻(RDS(on)@Vgs,Id)
12mΩ@10V,75A
功率(Pd)
880W
阈值电压(Vgs(th)@Id)
4.5V@1mA
栅极电荷(Qg@Vgs)
233nC@10V
输入电容(Ciss@Vds)
14.6nF@25V
工作温度
-55℃~+175℃@(Tj)
Shop:
1001
Settle
Cooperation
QTY[pcs]
Price[CNY/pcs]
1+
94.75973
10+
85.686
120+
70.9061
270+
69.4094
510+
60.42921
1020+
52.66509
QTY(Multiplicity:1):
Stock:
420
Mpq:
30
Delivery:
18-20 Business Day
Total:
94.76
C000150036 IXFH150N17T2 由 IXYS(艾赛斯) 设计生产,在 https://www.szyjc.com 沅竞成供应链有限公司 分立半导体-晶体管-MOSFET 里有现货销售,并且可以通过 原厂/代理 及其他正规渠道进行采购订货。C000150036 IXFH150N17T2 参考价格 ¥94.7597,实时库存 420。TO-247-3 Qg: 233 nC, VGS: 10V, Package: TO-247-3, Transistor polarity: MOSFET, Operating Temperature Range: -55℃~175℃, VDS: 175V, Termination type: Through Hole, Rds On: 0.012Ω, Circuit Branch Number: 1Channel, Continuous drain current: 150A, Pd-Power Dissipation: 880W, 类型: 1个N沟道, 漏源电压(Vdss): 175V, 连续漏极电流(Id): 150A, 导通电阻(RDS(on)@Vgs,Id): 12mΩ@10V,75A, 功率(Pd): 880W, 阈值电压(Vgs(th)@Id): 4.5V@1mA, 栅极电荷(Qg@Vgs): 233nC@10V, 输入电容(Ciss@Vds): 14.6nF@25V, 工作温度: -55℃~+175℃@(Tj)。你可以下载 IXFH150N17T2 中文资料、引脚图、Datasheet数据手册功能说明书,并查看实时库存、价格、交期,特殊情况可做询报价、bom一键采购和选型替代。平台提供数据API对接,实时库存VMI服务和在线EDI交易。
Datasheet
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