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BUK9Y15-60E,115

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Mfr.:Nexperia(安世)
Mfr. Part #:
YJC. No:
Package:SOT-669
ECCN:EAR99
Description:表面贴装型 N 通道 60V 53A(Tc) 95W(Tc) LFPAK56,Power-SO8
Datasheet:
Datasheet
SPECIFICATION
Category
RFFETMOSFET
Package
LFPAK56-5
Operating Temperature Range
-55℃~175℃
Transistor type
N沟道
Qualification level
AEC-Q101
VDS
60V
Continuous drain current
53A
Rds On
0.0121Ω
Pd-Power Dissipation
95W
VGS(th)
1.7V
Termination type
贴片
类型
1个N沟道
漏源电压(Vdss)
60V
连续漏极电流(Id)
53A
导通电阻(RDS(on)@Vgs,Id)
13mΩ@10V,15A
功率(Pd)
95W
阈值电压(Vgs(th)@Id)
2.1V@1mA
栅极电荷(Qg@Vgs)
17.2nC@5V
输入电容(Ciss@Vds)
2.603nF@25V
工作温度
-55℃~+175℃@(Tj)
Shop:
1001
Settle
Cooperation
QTY[pcs]
Price[CNY/pcs]
1500+
4.36494
3000+
4.10908
7500+
3.91333
10500+
3.73274
QTY(Multiplicity:1500):
Stock:
72,000
Mpq:
1500
Delivery:
14-19 Business Day
Total:
6,547.41
C000509312 BUK9Y15-60E,115 由 Nexperia(安世) 设计生产,在 https://www.szyjc.com 沅竞成供应链有限公司 集成电路-射频/无线电-RFFETMOSFET 里有现货销售,并且可以通过 原厂/代理 及其他正规渠道进行采购订货。C000509312 BUK9Y15-60E,115 参考价格 ¥4.3649,实时库存 72000。SOT-669 Package: LFPAK56-5, Operating Temperature Range: -55℃~175℃, Transistor type: N沟道, Qualification level: AEC-Q101, VDS: 60V, Continuous drain current: 53A, Rds On: 0.0121Ω, Pd-Power Dissipation: 95W, VGS(th): 1.7V, Termination type: 贴片, 类型: 1个N沟道, 漏源电压(Vdss): 60V, 连续漏极电流(Id): 53A, 导通电阻(RDS(on)@Vgs,Id): 13mΩ@10V,15A, 功率(Pd): 95W, 阈值电压(Vgs(th)@Id): 2.1V@1mA, 栅极电荷(Qg@Vgs): 17.2nC@5V, 输入电容(Ciss@Vds): 2.603nF@25V, 工作温度: -55℃~+175℃@(Tj)。你可以下载 BUK9Y15-60E,115 中文资料、引脚图、Datasheet数据手册功能说明书,并查看实时库存、价格、交期,特殊情况可做询报价、bom一键采购和选型替代。平台提供数据API对接,实时库存VMI服务和在线EDI交易。
Datasheet
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