STW33N60M2

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Mfr.:	ST(意法半导体)
Mfr. Part #:	STW33N60M2
YJC. No:	C001676624
Package:	TO-247-3
ECCN:	EAR99
Description:	N沟道,600V,26A,125mΩ@10V
Datasheet:	Datasheet

SPECIFICATION

Category

MOSFET

Operating Temperature Range

150℃~-55℃

Continuous drain current

26A

Rds On

0.108Ω

Qg

45.5 nC

VGS

25V

Package

TO-247-3

VDS

600V

Circuit Branch Number

1Channel

Pd-Power Dissipation

190W

Transistor polarity

MOSFET

Termination type

Through Hole

类型

1个N沟道

漏源电压(Vdss)

600V

连续漏极电流(Id)

26A

功率(Pd)

190W

导通电阻(RDS(on)@Vgs,Id)

125mΩ@10V,13A

阈值电压(Vgs(th)@Id)

4V@250uA

栅极电荷(Qg@Vgs)

45.5nC@10V

输入电容(Ciss@Vds)

1.781nF@100V

工作温度

-55℃~+150℃@(Tj)

Shop:

1001

Settle

Cooperation

QTY[pcs]

Price[CNY/pcs]

1+

52.01819

10+

38.28068

100+

32.08407

500+

26.82208

1000+

25.70823

QTY(Multiplicity:1):

Stock:

11,401

+-

Add To Cart

Quota

Mpq:

1

Delivery:

14-16 Business Day

Total:

￥52.02

C001676624 STW33N60M2 由 ST(意法半导体) 设计生产，在 https://www.szyjc.com 沅竞成供应链有限公司 分立半导体-晶体管-MOSFET 里有现货销售,并且可以通过 原厂/代理 及其他正规渠道进行采购订货。C001676624 STW33N60M2 参考价格 ￥52.0182，实时库存 11401。TO-247-3 Operating Temperature Range: 150℃~-55℃, Continuous drain current: 26A, Rds On: 0.108Ω, Qg: 45.5 nC, VGS: 25V, Package: TO-247-3, VDS: 600V, Circuit Branch Number: 1Channel, Pd-Power Dissipation: 190W, Transistor polarity: MOSFET, Termination type: Through Hole, 类型: 1个N沟道, 漏源电压(Vdss): 600V, 连续漏极电流(Id): 26A, 功率(Pd): 190W, 导通电阻(RDS(on)@Vgs,Id): 125mΩ@10V,13A, 阈值电压(Vgs(th)@Id): 4V@250uA, 栅极电荷(Qg@Vgs): 45.5nC@10V, 输入电容(Ciss@Vds): 1.781nF@100V, 工作温度: -55℃~+150℃@(Tj)。你可以下载 STW33N60M2 中文资料、引脚图、Datasheet数据手册功能说明书，并查看实时库存、价格、交期，特殊情况可做询报价、bom一键采购和选型替代。平台提供数据API对接，实时库存VMI服务和在线EDI交易。