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TISP61089DR-S
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| Mfr.: | Bourns(博恩思) |
| Mfr. Part #: | |
| YJC. No: | |
| Package: | SOIC-8 |
| ECCN: | EAR99 |
| Description: | Thyristor Surge Protection Devices 100V 11A 8-Pin SOIC N T/R |
| Datasheet: | Datasheet |
SPECIFICATION
Category
可控硅SCR
Height
1.55 mm
Holding Current
0.15A
Maximum Breakover Current IBO
57V
Off-state voltage (Vdrm)
100V
Transistor type
Dual Forward Conducting P-Gate Thyristors
Operating Temperature Range
-40℃~85℃
Package
SOIC-8
Length
5 mm
Width
4 mm
Termination type
SMD/SMT
Gate trigger current
0.000005A
断态峰值电压(Vdrm)
100V
开关电压(Vs)
64V
峰值脉冲电流-Ipp(10/1000us)
30A
漏电流(Idrm)
5uA
维持电流(Ih)
150mA
断态电容(Co)
100pF
QTY[pcs]
Price[CNY/pcs]
1+
5.04963
600+
4.85908
QTY(Multiplicity:1):
Stock:
28,828Mpq:
1
Delivery:
17-20 Business Day
Total:
￥595.86
C002041310 TISP61089DR-S 由 Bourns(博恩思) 设计生产，在 https://www.szyjc.com 沅竞成供应链有限公司 分立半导体-晶体管-可控硅SCR 里有现货销售,并且可以通过 原厂/代理 及其他正规渠道进行采购订货。C002041310 TISP61089DR-S 参考价格 ￥5.0496，实时库存 28828。SOIC-8 Height: 1.55 mm, Holding Current: 0.15A, Maximum Breakover Current IBO: 57V, Off-state voltage (Vdrm): 100V, Transistor type: Dual Forward Conducting P-Gate Thyristors, Operating Temperature Range: -40℃~85℃, Package: SOIC-8, Length: 5 mm, Width: 4 mm, Termination type: SMD/SMT, Gate trigger current: 0.000005A, 断态峰值电压(Vdrm): 100V, 开关电压(Vs): 64V, 峰值脉冲电流-Ipp(10/1000us): 30A, 漏电流(Idrm): 5uA, 维持电流(Ih): 150mA, 断态电容(Co): 100pF。你可以下载 TISP61089DR-S 中文资料、引脚图、Datasheet数据手册功能说明书，并查看实时库存、价格、交期，特殊情况可做询报价、bom一键采购和选型替代。平台提供数据API对接，实时库存VMI服务和在线EDI交易。
Datasheet
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