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SVF6N60D
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| Mfr.: | Silan(士兰) |
| Mfr. Part #: | |
| YJC. No: | |
| Package: | TO-252-2(DPAK) |
| ECCN: | EAR99 |
| Description: | N沟道,600V,6A,1.5Ω@10V SVF6N60DTR |
| Datasheet: | Datasheet |
SPECIFICATION
Category
MOSFET
VGS
4V 0.00025A
VDS
600V
Transistor polarity
N沟道
Pd-Power Dissipation
125W
Package
TO-252-2(DPAK)
Continuous drain current
6A
Rds On
1.5Ω 3A 10V
类型
1个N沟道
漏源电压(Vdss)
600V
连续漏极电流(Id)
6A
导通电阻(RDS(on)@Vgs,Id)
1.5Ω@10V,3A
功率(Pd)
125W
阈值电压(Vgs(th)@Id)
4V@250uA
QTY[pcs]
Price[CNY/pcs]
1+
2.11213
10+
1.65087
30+
1.35942
100+
1.25393
500+
1.20872
1000+
1.17858
QTY(Multiplicity:1):
Stock:
12,500Mpq:
2500 (圆盘)
Delivery:
2-3 Business Day
Total:
￥2.12
C002339625 SVF6N60D 由 Silan(士兰) 设计生产，在 https://www.szyjc.com 沅竞成供应链有限公司 分立半导体-晶体管-MOSFET 里有现货销售,并且可以通过 原厂/代理 及其他正规渠道进行采购订货。C002339625 SVF6N60D 参考价格 ￥2.1121，实时库存 12500。TO-252-2(DPAK) VGS: 4V 0.00025A, VDS: 600V, Transistor polarity: N沟道, Pd-Power Dissipation: 125W, Package: TO-252-2(DPAK), Continuous drain current: 6A, Rds On: 1.5Ω 3A 10V, 类型: 1个N沟道, 漏源电压(Vdss): 600V, 连续漏极电流(Id): 6A, 导通电阻(RDS(on)@Vgs,Id): 1.5Ω@10V,3A, 功率(Pd): 125W, 阈值电压(Vgs(th)@Id): 4V@250uA。你可以下载 SVF6N60D 中文资料、引脚图、Datasheet数据手册功能说明书，并查看实时库存、价格、交期，特殊情况可做询报价、bom一键采购和选型替代。平台提供数据API对接，实时库存VMI服务和在线EDI交易。
Datasheet
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