UTT18P10L-TN3-R

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Mfr.:	UTC(友顺)
Mfr. Part #:	UTT18P10L-TN3-R
YJC. No:	C002351740
Package:	TO-252-2(DPAK)
ECCN:	EAR99
Description:	P沟道,-100V,-18A,200mΩ@-10V
Datasheet:	Datasheet

SPECIFICATION

Category

MOSFET

Package

TO-252-2(DPAK)

VGS

0.00025A 2.5V

Pd-Power Dissipation

150W

Rds On

0.2Ω 10V 18A

VDS

100V

Continuous drain current

18A

Transistor polarity

P沟道

类型

1个P沟道

漏源电压(Vdss)

100V

连续漏极电流(Id)

18A

功率(Pd)

150W

导通电阻(RDS(on)@Vgs,Id)

200mΩ@10V,18A

阈值电压(Vgs(th)@Id)

2.5V@250uA

Shop:

1001

Settle

Cooperation

QTY[pcs]

Price[CNY/pcs]

5+

1.83105

50+

1.49111

150+

1.34543

500+

1.16373

2500+

0.94729

5000+

0.8987

QTY(Multiplicity:5):

Stock:

100,000

+-

Add To Cart

Quota

Mpq:

2500 (圆盘)

Delivery:

2-3 Business Day

Total:

￥9.16

C002351740 UTT18P10L-TN3-R 由 UTC(友顺) 设计生产，在 https://www.szyjc.com 沅竞成供应链有限公司 分立半导体-晶体管-MOSFET 里有现货销售,并且可以通过 原厂/代理 及其他正规渠道进行采购订货。C002351740 UTT18P10L-TN3-R 参考价格 ￥1.8311，实时库存 100000。TO-252-2(DPAK) Package: TO-252-2(DPAK), VGS: 0.00025A 2.5V, Pd-Power Dissipation: 150W, Rds On: 0.2Ω 10V 18A, VDS: 100V, Continuous drain current: 18A, Transistor polarity: P沟道, 类型: 1个P沟道, 漏源电压(Vdss): 100V, 连续漏极电流(Id): 18A, 功率(Pd): 150W, 导通电阻(RDS(on)@Vgs,Id): 200mΩ@10V,18A, 阈值电压(Vgs(th)@Id): 2.5V@250uA。你可以下载 UTT18P10L-TN3-R 中文资料、引脚图、Datasheet数据手册功能说明书，并查看实时库存、价格、交期，特殊情况可做询报价、bom一键采购和选型替代。平台提供数据API对接，实时库存VMI服务和在线EDI交易。